NNCD3.3G-A

更新时间： 2024-09-17 13:12:03

品牌	Logo	应用领域
瑞萨 - RENESAS		瞬态抑制器二极管
页数	文件大小	规格书
8页	219K
描述
85W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, PLASTIC, SC-74A, 5 PIN

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中文翻译

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技术参数
数据手册

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NNCD3.3G-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SC-74A
包装说明：	PLASTIC, SC-74A, 5 PIN	针数：	5
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.5
最大击穿电压：	3.5 V	最小击穿电压：	3.1 V
击穿电压标称值：	3.3 V	配置：	COMMON ANODE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PDSO-G5	最大非重复峰值反向功率耗散：	85 W
元件数量：	4	端子数量：	5
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	0.2 W
认证状态：	Not Qualified	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

NNCD3.3G-A 数据手册

DATA SHEET

ESD NOISE CLIPPING DIODE

NNCD2.0DA to NNCD39DA

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE

2-PIN SUPER MINI MOLD

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

These products are the diode developed for ESD (Electrostatic

Discharge) noise protection. Based on the IEC61000-4-2 test on

electromagnetic interference (EMI), the diode assures an endurance,

thus making itself most suitable for external interface circuit

protection.

2.5 0.15

1.7 0.1

FEATURES

• Based on the electrostatic discharge immunity test (IEC61000-4-2),

the product assures the minimum endurance

• Based on the reference supply of the set, the product achieves

a series over a wide range (32 product names lined up)

• Package: 2-pin Super Mini Mold (SC-76)

Cathode Indication

APPLICATIONS

• External interface circuit ESD protection

• Circuits for Waveform clipper, Surge absorber

ORDERING INFORMATION

<R>

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

NNCD∗∗^{Note 1}DA-T1-AT^{Note 2}

Pure Sn (Tin)

Tape 3000 p/reel

2-pin Super Mini Mold

(SC-76)

Notes 1. Type Number

2. Pb-free (This product does not contain Pb in the external electrode and other parts.)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Parameter

Symbol

Rating

Unit

Remark

Power Dissipation

200

When surface mounting on

30 mm x 30 mm x 1.6 mmt

P.C.B. (Glass Epoxy),

refer to Figure 1

Surge Reverse Power

Junction Temperature

Storage Temperature

PRSM

150

^οC

tT = 10 μs, 1 pulse, refer to Figure 5

Tstg

−55 to +150

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18879EJ2V0DS00 (2nd edition)

Date Published January 2010 NS

Printed in Japan

2009

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7 8

中文翻译

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与NNCD3.3G-A相关器件

型号	品牌	获取价格	描述	数据表
NNCD3.6A	NEC	获取价格	ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE
NNCD3.6A-AZ	RENESAS	获取价格	100W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-34
NNCD3.6B	NEC	获取价格	ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE
NNCD3.6B-AZ	RENESAS	获取价格	100W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-35
NNCD3.6C	NEC	获取价格	ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE
NNCD3.6C-T1-AT	RENESAS	获取价格	NNCD3.6C-T1-AT
NNCD3.6C-T2	RENESAS	获取价格	UNIDIRECTIONAL, SILICON, TVS DIODE, ULTRA SUPER MINIMOLD PACKAGE-2
NNCD3.6C-T2	NEC	获取价格	UNIDIRECTIONAL, SILICON, TVS DIODE, ULTRA SUPER MINIMOLD PACKAGE-2
NNCD3.6C-T2-A	RENESAS	获取价格	TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR
NNCD3.6C-T2-AT	RENESAS	获取价格	TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR

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