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NNCD3.3B PDF预览

NNCD3.3B

更新时间: 2024-09-16 22:28:55
品牌 Logo 应用领域
日电电子 - NEC 瞬态抑制器二极管局域网
页数 文件大小 规格书
8页 45K
描述
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE

NNCD3.3B 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.73Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

NNCD3.3B 数据手册

 浏览型号NNCD3.3B的Datasheet PDF文件第2页浏览型号NNCD3.3B的Datasheet PDF文件第3页浏览型号NNCD3.3B的Datasheet PDF文件第4页浏览型号NNCD3.3B的Datasheet PDF文件第5页浏览型号NNCD3.3B的Datasheet PDF文件第6页浏览型号NNCD3.3B的Datasheet PDF文件第7页 
DATA SHEET  
E.S.D NOISE CLIPPING DIODES  
NNCD3.3B to NNCD12B  
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES  
(500 mW TYPE)  
This product series is a diode developed for E.S.D (Electrostatic  
PACKAGE DIMENSIONS  
Discharge) noise protection. Based on the IEC1000-4-2 test on  
electromagnetic interference (EMI), the diode assures an endur-  
ance of no less than 30 kV.  
(in millimeters)  
φ
0.5  
Type NNCD2.0B to NNCD12B Series is into DO-35 Package with  
DHD (Double Heatsink Diode) construction having allowable  
power dissipation of 500 mW.  
Cathode  
indication  
FEATURES  
Based on the electrostatic discharge immunity test (IEC1000-4-  
2), the product assures the minimum endurance of 30 kV.  
Based on the reference supply of the set, the product achieves  
a series over a wide range (15 product name lined up).  
DHD (Double Heatsink Diode) construction.  
φ
2.0 MAX.  
APPLICATIONS  
Circuit E.S.D protection.  
Circuits for Waveform clipper, Surge absorber.  
MAXIMUM RATINGS (TA = 25 °C)  
Power Dissipation  
P
500 mW  
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
100 W (tT = 10 µs 1 pulse) Fig. 7  
175 °C  
Tstg  
–65 °C to +175 °C  
Document No. D11770EJ2V0DS00 (2nd edition)  
Date Published December 1996 N  
Printed in Japan  
1996  
©

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