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NNCD11B-AZ PDF预览

NNCD11B-AZ

更新时间: 2024-10-28 13:11:59
品牌 Logo 应用领域
日电电子 - NEC 瞬态抑制器二极管局域网
页数 文件大小 规格书
8页 49K
描述
Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35

NNCD11B-AZ 技术参数

生命周期:Transferred包装说明:O-XALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.62
最大击穿电压:11.26 V最小击穿电压:10.18 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-XALF-W2
最大非重复峰值反向功率耗散:100 W元件数量:1
端子数量:2封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NNCD11B-AZ 数据手册

 浏览型号NNCD11B-AZ的Datasheet PDF文件第2页浏览型号NNCD11B-AZ的Datasheet PDF文件第3页浏览型号NNCD11B-AZ的Datasheet PDF文件第4页浏览型号NNCD11B-AZ的Datasheet PDF文件第5页浏览型号NNCD11B-AZ的Datasheet PDF文件第6页浏览型号NNCD11B-AZ的Datasheet PDF文件第7页 
DATA SHEET  
E.S.D NOISE CLIPPING DIODES  
NNCD3.3A to NNCD12A  
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES  
(400 mW TYPE)  
This product series is a diode developed for E.S.D (Electrostatic  
PACKAGE DIMENSIONS  
Discharge) noise protection. Based on the IEC1000-4-2 test on  
electromagnetic interference (EMI), the diode assures an endur-  
ance of no less than 30 kV.  
(in millimeters)  
φ
0.4  
Type NNCD2.0A to NNCD12A Series is into DO-34 Package  
(Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)  
construction having allowable power dissipation of 400 mW.  
Cathode  
indication  
FEATURES  
Based on the electrostatic discharge immunity test (IEC1000-4-  
2), the product assures the minimum endurance of 30 kV.  
Based on the reference supply of the set, the product achieves  
a series over a wide range (15 product name lined up).  
DHD (Double Heatsink Diode) construction.  
φ
2.0 MAX.  
APPLICATIONS  
Circuit E.S.D protection.  
Circuits for Waveform clipper, Surge absorber.  
MAXIMUM RATINGS (TA = 25 °C)  
Power Dissipation  
P
400 mW  
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
100 W (tT = 10 µs 1 pulse) Fig. 7  
175 °C  
Tstg  
–65 °C to +175 °C  
Document No. D11769EJ2V0DS00 (2nd edition)  
Date Published December 1996 N  
Printed in Japan  
1996  
©

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