生命周期: | Transferred | 包装说明: | R-PDSO-G2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.51 | 最大击穿电压: | 11.6 V |
最小击穿电压: | 10.4 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | R-PDSO-G2 | JESD-609代码: | e6 |
最大非重复峰值反向功率耗散: | 85 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 0.2 W | 认证状态: | Not Qualified |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NNCD11D-T1 | RENESAS |
获取价格 |
85W, UNIDIRECTIONAL, SILICON, TVS DIODE, SUPER MINIMOLD PACKAGE-2 | |
NNCD11D-T1-A | RENESAS |
获取价格 |
NNCD11D-T1-A | |
NNCD11D-T2-A | RENESAS |
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TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR | |
NNCD11D-T2-AT | RENESAS |
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TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR | |
NNCD11E | NEC |
获取价格 |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE | |
NNCD11E-A | NEC |
获取价格 |
Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, MINIMOLD, SC-59, | |
NNCD11F | NEC |
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ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD | |
NNCD11F-A | RENESAS |
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100W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, MINIMOLD, SC-59, 3 PIN | |
NNCD11F-A | NEC |
获取价格 |
Trans Voltage Suppressor Diode, 100W, Unidirectional, 2 Element, Silicon, MINIMOLD, SC-59, | |
NNCD11F-L | RENESAS |
获取价格 |
NNCD11F-L |