5秒后页面跳转
NNCD11D-A PDF预览

NNCD11D-A

更新时间: 2024-10-28 19:54:03
品牌 Logo 应用领域
日电电子 - NEC 局域网ISM频段光电二极管电视
页数 文件大小 规格书
8页 41K
描述
85W, UNIDIRECTIONAL, SILICON, TVS DIODE, SUPER MINIMOLD PACKAGE-2

NNCD11D-A 技术参数

生命周期:Transferred包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.51最大击穿电压:11.6 V
最小击穿电压:10.4 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e6
最大非重复峰值反向功率耗散:85 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
表面贴装:YES技术:AVALANCHE
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

NNCD11D-A 数据手册

 浏览型号NNCD11D-A的Datasheet PDF文件第2页浏览型号NNCD11D-A的Datasheet PDF文件第3页浏览型号NNCD11D-A的Datasheet PDF文件第4页浏览型号NNCD11D-A的Datasheet PDF文件第5页浏览型号NNCD11D-A的Datasheet PDF文件第6页浏览型号NNCD11D-A的Datasheet PDF文件第7页 
DATA SHEET  
E.S.D NOISE CLIPPING DIODES  
NNCD3.3D to NNCD12D  
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES  
(200 mW TYPE)  
This product series is a diode developed for E.S.D (Electrostatic  
Discharge) noise protection. Based on the IEC1000-4-2 test on  
electromagnetic interference (EMI), the diode assures an endur-  
ance of no less than 30 kV, thus making itself most suitable for  
external interface circuit protection.  
PACKAGE DIMENSIONS  
(in millimeters)  
2.5 ± 0.15  
1.7 ± 0.1  
Type NNCD3.3D to NNCD12D Series are into 2PIN Super Mini  
Mold Package having allowable power dissipation of 200 mW.  
FEATURES  
Based on the electrostatic discharge immunity test (IEC1000-4-  
2), the product assures the minimum endurance of 30 kV.  
Based on the reference supply of the set, the product achieves  
a series over a wide range (15 product name lined up).  
Cathode  
Indication  
APPLICATIONS  
External interface circuit E.S.D protection.  
Circuits for Waveform clipper, Surge absorber.  
MAXIMUM RATINGS (TA = 25 °C)  
Power Dissipation  
P
200 mW  
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
85 W (tT = 10 µs 1 pulse) Fig. 6  
150 °C  
Tstg  
–55 °C to +150 °C  
Document No. D11772EJ2V0DS00 (2nd edition)  
Date Published December 1996 N  
Printed in Japan  
1996  
©

与NNCD11D-A相关器件

型号 品牌 获取价格 描述 数据表
NNCD11D-T1 RENESAS

获取价格

85W, UNIDIRECTIONAL, SILICON, TVS DIODE, SUPER MINIMOLD PACKAGE-2
NNCD11D-T1-A RENESAS

获取价格

NNCD11D-T1-A
NNCD11D-T2-A RENESAS

获取价格

TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR
NNCD11D-T2-AT RENESAS

获取价格

TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR
NNCD11E NEC

获取价格

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE
NNCD11E-A NEC

获取价格

Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, MINIMOLD, SC-59,
NNCD11F NEC

获取价格

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD
NNCD11F-A RENESAS

获取价格

100W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, MINIMOLD, SC-59, 3 PIN
NNCD11F-A NEC

获取价格

Trans Voltage Suppressor Diode, 100W, Unidirectional, 2 Element, Silicon, MINIMOLD, SC-59,
NNCD11F-L RENESAS

获取价格

NNCD11F-L