5秒后页面跳转
NNCD11F PDF预览

NNCD11F

更新时间: 2024-10-27 22:28:55
品牌 Logo 应用领域
日电电子 - NEC 二极管
页数 文件大小 规格书
8页 42K
描述
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD

NNCD11F 技术参数

生命周期:Obsolete包装说明:MINIMOLD, SC-59, 3 PIN
Reach Compliance Code:unknown风险等级:5.74
最大击穿电压:11.56 V最小击穿电压:10.44 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G3
最大非重复峰值反向功率耗散:100 W元件数量:2
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified表面贴装:YES
技术:AVALANCHE端子形式:GULL WING
端子位置:DUALBase Number Matches:1

NNCD11F 数据手册

 浏览型号NNCD11F的Datasheet PDF文件第2页浏览型号NNCD11F的Datasheet PDF文件第3页浏览型号NNCD11F的Datasheet PDF文件第4页浏览型号NNCD11F的Datasheet PDF文件第5页浏览型号NNCD11F的Datasheet PDF文件第6页浏览型号NNCD11F的Datasheet PDF文件第7页 
DATA SHEET  
E.S.D NOISE CLIPPING DIODES  
NNCD3.3F to NNCD12F  
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES  
(DOUBLE TYPE, ANODE COMMON)  
3PIN MINI MOLD  
This product series is a diode developed for E.S.D (Electrostatic  
Discharge) noise protection. Based on the IEC1000-4-2 test on  
electromagnetic interference (EMI), the diode assures an endur-  
ance of no less than 30 kV, thus making itself most suitable for  
external interface circuit protection.  
PACKAGE DIMENSIONS  
(in millimeters)  
2.8 ± 0.2  
+0.1  
1.5  
0.65  
–0.15  
Type NNCD3.3F to NNCD12F Series include two elements in  
3PIN Mini Mold Package having allowable power dissipation of  
200 mW.  
2
1
3
FEATURES  
Based on the electrostatic discharge immunity test (IEC1000-4-  
2), the product assures the minimum endurance of 30 kV.  
Based on the reference supply of the set, the product achieves  
a series over a wide range (15 product name lined up).  
Marking  
APPLICATIONS  
External interface circuit E.S.D protection.  
PIN CONNECTION  
1. K1: Cathode 1  
2. K2: Cathode 2  
Circuits for Waveform clipper, Surge absorber.  
SC-59 (EIAJ)  
3. A : Anode (common)  
K2  
2
MAXIMUM RATINGS (TA = 25 °C)  
A
Power Dissipation  
P
200 mW  
(Total)  
3
K1  
1
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
100 W (tT = 10 µs 1 pulse) Fig. 6  
150 °C  
Tstg  
–55 °C to +150 °C  
Document No. D11774EJ2V0DS00 (2nd edition)  
Date Published December 1996 N  
Printed in Japan  
1996  
©

与NNCD11F相关器件

型号 品牌 获取价格 描述 数据表
NNCD11F-A RENESAS

获取价格

100W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, MINIMOLD, SC-59, 3 PIN
NNCD11F-A NEC

获取价格

Trans Voltage Suppressor Diode, 100W, Unidirectional, 2 Element, Silicon, MINIMOLD, SC-59,
NNCD11F-L RENESAS

获取价格

NNCD11F-L
NNCD11F-T1B NEC

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 2 Element, Silicon, MINIMOLD, SC-59, 3 PIN
NNCD11F-T1B-AT RENESAS

获取价格

NNCD11F-T1B-AT
NNCD11F-T2B NEC

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 2 Element, Silicon, MINIMOLD, SC-59, 3 PIN
NNCD11F-T2B-A RENESAS

获取价格

TRANSIENT SUPPRESSOR DIODE,DUAL,UNIDIRECTIONAL,CENTER-TAPPED,SC-59
NNCD12A NEC

获取价格

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE
NNCD12A-AZ RENESAS

获取价格

100W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-34
NNCD12A-T1-AZ RENESAS

获取价格

NNCD12A-T1-AZ