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NNCD12B-AZ PDF预览

NNCD12B-AZ

更新时间: 2024-01-14 05:48:43
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网二极管
页数 文件大小 规格书
8页 43K
描述
Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35

NNCD12B-AZ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-XALF-W2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.6最大击穿电压:12.3 V
最小击穿电压:11.13 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-XALF-W2最大非重复峰值反向功率耗散:100 W
元件数量:1端子数量:2
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

NNCD12B-AZ 数据手册

 浏览型号NNCD12B-AZ的Datasheet PDF文件第2页浏览型号NNCD12B-AZ的Datasheet PDF文件第3页浏览型号NNCD12B-AZ的Datasheet PDF文件第4页浏览型号NNCD12B-AZ的Datasheet PDF文件第5页浏览型号NNCD12B-AZ的Datasheet PDF文件第6页浏览型号NNCD12B-AZ的Datasheet PDF文件第7页 
DATA SHEET  
E.S.D NOISE CLIPPING DIODES  
NNCD3.3B to NNCD12B  
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES  
(500 mW TYPE)  
This product series is a diode developed for E.S.D (Electrostatic  
PACKAGE DIMENSIONS  
Discharge) noise protection. Based on the IEC1000-4-2 test on  
electromagnetic interference (EMI), the diode assures an endur-  
ance of no less than 30 kV.  
(in millimeters)  
φ
0.5  
Type NNCD2.0B to NNCD12B Series is into DO-35 Package with  
DHD (Double Heatsink Diode) construction having allowable  
power dissipation of 500 mW.  
Cathode  
indication  
FEATURES  
Based on the electrostatic discharge immunity test (IEC1000-4-  
2), the product assures the minimum endurance of 30 kV.  
Based on the reference supply of the set, the product achieves  
a series over a wide range (15 product name lined up).  
DHD (Double Heatsink Diode) construction.  
φ
2.0 MAX.  
APPLICATIONS  
Circuit E.S.D protection.  
Circuits for Waveform clipper, Surge absorber.  
MAXIMUM RATINGS (TA = 25 °C)  
Power Dissipation  
P
500 mW  
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
100 W (tT = 10 µs 1 pulse) Fig. 7  
175 °C  
Tstg  
–65 °C to +175 °C  
Document No. D11770EJ2V0DS00 (2nd edition)  
Date Published December 1996 N  
Printed in Japan  
1996  
©

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