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NNCD11B-AZ PDF预览

NNCD11B-AZ

更新时间： 2024-10-28 13:11:59
品牌 Logo 应用领域
瑞萨 - RENESAS 瞬态抑制器二极管
页数 文件大小 规格书
8页 227K
描述
100W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-35

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中文翻译

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NNCD11B-AZ 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：O-XALF-W2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.62最大击穿电压：11.26 V
最小击穿电压：10.18 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-35
JESD-30 代码：O-XALF-W2最大非重复峰值反向功率耗散：100 W
元件数量：1端子数量：2
封装主体材料：UNSPECIFIED封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified表面贴装：NO
技术：AVALANCHE端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NNCD11B-AZ 数据手册

 浏览型号NNCD11B-AZ的Datasheet PDF文件第2页浏览型号NNCD11B-AZ的Datasheet PDF文件第3页浏览型号NNCD11B-AZ的Datasheet PDF文件第4页浏览型号NNCD11B-AZ的Datasheet PDF文件第5页浏览型号NNCD11B-AZ的Datasheet PDF文件第6页浏览型号NNCD11B-AZ的Datasheet PDF文件第7页 
DATA SHEET  
ESD NOISE CLIPPING DIODE  
NNCD2.0DA to NNCD39DA  
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE  
2-PIN SUPER MINI MOLD  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
These products are the diode developed for ESD (Electrostatic  
Discharge) noise protection. Based on the IEC61000-4-2 test on  
electromagnetic interference (EMI), the diode assures an endurance,  
thus making itself most suitable for external interface circuit  
protection.  
2.5 0.15  
1.7 0.1  
FEATURES  
• Based on the electrostatic discharge immunity test (IEC61000-4-2),  
the product assures the minimum endurance  
• Based on the reference supply of the set, the product achieves  
a series over a wide range (32 product names lined up)  
• Package: 2-pin Super Mini Mold (SC-76)  
Cathode Indication  
APPLICATIONS  
• External interface circuit ESD protection  
• Circuits for Waveform clipper, Surge absorber  
ORDERING INFORMATION  
<R>  
PART NUMBER  
LEAD PLATING  
PACKING  
PACKAGE  
NNCD∗∗Note 1DA-T1-ATNote 2  
Pure Sn (Tin)  
Tape 3000 p/reel  
2-pin Super Mini Mold  
(SC-76)  
Notes 1. Type Number  
2. Pb-free (This product does not contain Pb in the external electrode and other parts.)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Symbol  
Rating  
Unit  
mW  
Remark  
Power Dissipation  
P
200  
When surface mounting on  
30 mm x 30 mm x 1.6 mmt  
P.C.B. (Glass Epoxy),  
refer to Figure 1  
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
85  
150  
W
οC  
οC  
tT = 10 μs, 1 pulse, refer to Figure 5  
Tstg  
−55 to +150  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18879EJ2V0DS00 (2nd edition)  
Date Published January 2010 NS  
Printed in Japan  
2009  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
12345678

中文翻译

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与NNCD11B-AZ相关器件

型号 品牌 获取价格 描述 数据表
NNCD11C NEC

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 		ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE
NNCD11C-A NEC

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 		Trans Voltage Suppressor Diode, 85W, Unidirectional, 1 Element, Silicon, ULTRA SUPER MINIM
NNCD11C-A RENESAS

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 		85W, UNIDIRECTIONAL, SILICON, TVS DIODE, ULTRA SUPER MINIMOLD PACKAGE-2
NNCD11C-T1 NEC

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 		85W, UNIDIRECTIONAL, SILICON, TVS DIODE, ULTRA SUPER MINIMOLD PACKAGE-2
NNCD11C-T2 NEC

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 		UNIDIRECTIONAL, SILICON, TVS DIODE, ULTRA SUPER MINIMOLD PACKAGE-2
NNCD11C-T2-AT RENESAS

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 		TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR
NNCD11D NEC

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 		ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE
NNCD11DA RENESAS

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 		ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD
NNCD11D-A NEC

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 		85W, UNIDIRECTIONAL, SILICON, TVS DIODE, SUPER MINIMOLD PACKAGE-2
NNCD11D-T1 RENESAS

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 		85W, UNIDIRECTIONAL, SILICON, TVS DIODE, SUPER MINIMOLD PACKAGE-2

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