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NNCD10E PDF预览

NNCD10E

更新时间: 2024-10-28 03:46:11
品牌 Logo 应用领域
日电电子 - NEC 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
8页 41K
描述
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE

NNCD10E 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SC-59包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.64最大击穿电压:10.55 V
最小击穿电压:9.45 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
最大非重复峰值反向功率耗散:100 W元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
表面贴装:YES技术:AVALANCHE
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

NNCD10E 数据手册

 浏览型号NNCD10E的Datasheet PDF文件第2页浏览型号NNCD10E的Datasheet PDF文件第3页浏览型号NNCD10E的Datasheet PDF文件第4页浏览型号NNCD10E的Datasheet PDF文件第5页浏览型号NNCD10E的Datasheet PDF文件第6页浏览型号NNCD10E的Datasheet PDF文件第7页 
DATA SHEET  
E.S.D NOISE CLIPPING DIODES  
NNCD3.3E to NNCD12E  
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES  
(200 mW TYPE)  
This product series is a diode developed for E.S.D (Electrostatic  
Discharge) noise protection. Based on the IEC1000-4-2 test on  
electromagnetic interference (EMI), the diode assures an endur-  
ance of no less than 30 kV, thus making itself most suitable for  
external interface circuit protection.  
PACKAGE DIMENSIONS  
(in millimeters)  
2.8 ± 0.2  
+0.1  
1.5  
0.65  
–0.15  
Type NNCD3.3E to NNCD12E Series are into 3PIN Mini Mold  
Package having allowable power dissipation of 200 mW.  
2
1
FEATURES  
3
Based on the electrostatic discharge immunity test (IEC1000-4-  
2), the product assures the minimum endurance of 30 kV.  
Based on the reference supply of the set, the product achieves  
a series over a wide range (15 product name lined up).  
Marking  
APPLICATIONS  
External interface circuit E.S.D protection.  
Circuits for Waveform clipper, Surge absorber.  
MAXIMUM RATINGS (TA = 25 °C)  
PIN CONNECTION  
1. NC  
Power Dissipation  
P
200 mW  
2. Anode  
3. Cathode  
SC-59 (EIAJ)  
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
100 W (tT = 10 µs 1 pulse) Fig. 6  
150 °C  
Tstg  
–55 °C to +150 °C  
Document No. D11773EJ2V0DS00 (2nd edition)  
Date Published December 1996 N  
Printed in Japan  
1996  
©

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