是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP18,.3 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | Is Samacsys: | N |
最长访问时间: | 360 ns | JESD-30 代码: | R-PDIP-T18 |
JESD-609代码: | e0 | 内存密度: | 1024 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 4 |
端子数量: | 18 | 字数: | 256 words |
字数代码: | 256 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 256X4 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP18,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
子类别: | SRAMs | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NMC6552N-5/B+ | ETC |
获取价格 |
x4 SRAM | |
NMC87C257Q150 | NSC |
获取价格 |
IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | |
NMC87C257Q150 | TI |
获取价格 |
32KX8 UVPROM, 150ns, CDIP28, WINDOWED, CERAMIC, DIP-28 | |
NMC87C257Q200 | NSC |
获取价格 |
IC 32K X 8 UVPROM, 200 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | |
NMC87C257Q200 | TI |
获取价格 |
32KX8 UVPROM, 200ns, CDIP28, WINDOWED, CERAMIC, DIP-28 | |
NMC87C257QE150 | NSC |
获取价格 |
IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | |
NMC87C257QE150 | TI |
获取价格 |
32KX8 UVPROM, 150ns, CDIP28, WINDOWED, CERAMIC, DIP-28 | |
NMC87C257QE200 | NSC |
获取价格 |
IC 32K X 8 UVPROM, 200 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | |
NMC87C257QE200 | TI |
获取价格 |
32KX8 UVPROM, 200ns, CDIP28, WINDOWED, CERAMIC, DIP-28 | |
NMC87C257V150 | NSC |
获取价格 |
IC 32K X 8 OTPROM, 150 ns, PQCC32, PLASTIC, LCC-32, Programmable ROM |