NM29A080EV

更新时间： 2024-09-16 22:25:39

品牌	Logo	应用领域
美国国家半导体 - NSC		可编程只读存储器
页数	文件大小	规格书
14页	220K
描述
4-Mbit/8-Mbit CMOS Serial FLASH E2PROM

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NM29A080EV 数据手册

February 1996

NM29A040/080

4-Mbit/8-Mbit CMOS Serial FLASH E PROM

General Description

Features

Single 5V 10% power supply

4 kbyte erase block

The NM29A040/080 are 4-Mbit and 8-Mbit Flash memories

designed with a MICROWIRE^TMserial interface. All of the

features of the device are designed to provide the most cost

effective solution for applications requiring low bandwidth

file storage. Examples of these applications include digital

answering machines and personal digital recorders (digital

audio) or FAX and digital scanners (digital imaging). The

Serial Flash requires only a single 5V power supply, has a

small erase block size (4 kbytes) and a low EMI serial inter-

face.

Organized as 128 (256) Blocks per 4-Mbit (8-Mbit)

Device

Ð 128 pages per block

Ð 32 bytes per page (256 bits)

MICROWIRE^TMcompatible interface

Low operating current (typical)

Ð 5 mA read current

Ð 15 mA write current

Ð 10 mA erase current

Ð 5 mA standby current

The NM29A040/080 have been designed to work seam-

lessly with National’s CompactRISC^TMfamily (e.g.

NSAM266) of processors. In this manner National is able to

provide the complete system solution to digital audio re-

cording (processor, CODEC, Flash memory, software) or

digital imaging.

100k write/erase cycle endurance

Offered in PLCC and SOIC packages

Block Diagram

TL/D/12475–1

TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.

MICROWIRE^TM, SpeechPro^TM, CompactRISC^TMand CompactSPEECH^TMare trademarks of National Semiconductor Corporation.

1996 National Semiconductor Corporation

TL/D/12475

RRD-B30M36/Printed in U. S. A.

http://www.national.com

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