5秒后页面跳转
NM27C512VE120 PDF预览

NM27C512VE120

更新时间: 2024-11-16 04:13:27
品牌 Logo 应用领域
美国国家半导体 - NSC 内存集成电路可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
10页 160K
描述
524,288-Bit (64K x 8) High Performance CMOS EPROM

NM27C512VE120 数据手册

 浏览型号NM27C512VE120的Datasheet PDF文件第2页浏览型号NM27C512VE120的Datasheet PDF文件第3页浏览型号NM27C512VE120的Datasheet PDF文件第4页浏览型号NM27C512VE120的Datasheet PDF文件第5页浏览型号NM27C512VE120的Datasheet PDF文件第6页浏览型号NM27C512VE120的Datasheet PDF文件第7页 
February 1994  
NM27C512  
524,288-Bit (64K x 8) High Performance CMOS EPROM  
General Description  
The NM27C512 is a high performance 512K UV Erasable  
Electrically Programmable Read Only Memory (EPROM). It  
is manufactured using National’s proprietary 0.8 micron  
CMOS AMGTM EPROM technology for an excellent combi-  
nation of speed and economy while providing excellent reli-  
ability.  
The NM27C512 is one member of a high density EPROM  
Family which range in densities up to 4 Megabit.  
Features  
Y
High performance CMOS  
Ð 90 ns access time  
The NM27C512 provides microprocessor-based systems  
storage capacity for portions of operating system and appli-  
cation software. Its 90 ns access time provides no-  
wait-state operation with high-performance CPUs. The  
NM27C512 offers a single chip solution for the code storage  
requirements of 100% firmware-based equipment. Fre-  
quently-used software routines are quickly executed from  
EPROM storage, greatly enhancing system utility.  
Y
Fast turn-off for microprocessor compatibility  
Y
Manufacturers identification code  
Y
JEDEC standard pin configuration  
Ð 28-pin DIP package  
Ð 32-pin chip carrier  
The NM27C512 is configured in the standard JEDEC  
EPROM pinout which provides an easy upgrade path for  
systems which are currently using standard EPROMs.  
Block Diagram  
TL/D/10834–1  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
NSC800TM is a trademark of National Semiconductor Corporation.  
AMGTM is a trademark of WSI, Inc.  
C
1995 National Semiconductor Corporation  
TL/D/10834  
RRD-B30M65/Printed in U. S. A.  

与NM27C512VE120相关器件

型号 品牌 获取价格 描述 数据表
NM27C512VE120X FAIRCHILD

获取价格

OTP ROM, 64KX8, 120ns, CMOS, PQCC32, PLASTIC, LCC-32
NM27C512VE150 TI

获取价格

64KX8 OTPROM, 150ns, PQCC32, PLASTIC, LCC-32
NM27C512VE150 FAIRCHILD

获取价格

524,288-Bit (64K x 8) High Performance CMOS EPROM
NM27C512VE150 NSC

获取价格

524,288-Bit (64K x 8) High Performance CMOS EPROM
NM27C512VE200 NSC

获取价格

524,288-Bit (64K x 8) High Performance CMOS EPROM
NM27C512VE200 TI

获取价格

64KX8 OTPROM, 200ns, PQCC32, PLASTIC, LCC-32
NM27C512VE90 FAIRCHILD

获取价格

524,288-Bit (64K x 8) High Performance CMOS EPROM
NM27C512VE90 NSC

获取价格

524,288-Bit (64K x 8) High Performance CMOS EPROM
NM27C512VE90 TI

获取价格

64KX8 OTPROM, 90ns, PQCC32, PLASTIC, LCC-32
NM27C520 ETC

获取价格