Datasheet > NM27C512NE120

NM27C512NE120

更新时间： 2024-11-16 04:13:27

品牌	Logo	应用领域
美国国家半导体 - NSC		内存集成电路光电二极管可编程只读存储器 OTP只读存储器电动程控只读存储器
页数	文件大小	规格书
10页	160K
描述
524,288-Bit (64K x 8) High Performance CMOS EPROM

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NM27C512NE120 数据手册

February 1994

NM27C512

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description

The NM27C512 is a high performance 512K UV Erasable

Electrically Programmable Read Only Memory (EPROM). It

is manufactured using National’s proprietary 0.8 micron

CMOS AMG^TMEPROM technology for an excellent combi-

nation of speed and economy while providing excellent reli-

ability.

The NM27C512 is one member of a high density EPROM

Family which range in densities up to 4 Megabit.

Features

High performance CMOS

Ð 90 ns access time

The NM27C512 provides microprocessor-based systems

storage capacity for portions of operating system and appli-

cation software. Its 90 ns access time provides no-

wait-state operation with high-performance CPUs. The

NM27C512 offers a single chip solution for the code storage

requirements of 100% firmware-based equipment. Fre-

quently-used software routines are quickly executed from

EPROM storage, greatly enhancing system utility.

Fast turn-off for microprocessor compatibility

Manufacturers identification code

JEDEC standard pin configuration

Ð 28-pin DIP package

Ð 32-pin chip carrier

The NM27C512 is configured in the standard JEDEC

EPROM pinout which provides an easy upgrade path for

systems which are currently using standard EPROMs.

Block Diagram

TL/D/10834–1

TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.

NSC800^TMis a trademark of National Semiconductor Corporation.

AMG^TMis a trademark of WSI, Inc.

1995 National Semiconductor Corporation

TL/D/10834

RRD-B30M65/Printed in U. S. A.

12 3 4 5 6 7...10

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