是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | DFN | 包装说明: | 1.45 X 1 MM, 0.35 MM PITCH, LEAD FREE, UDFN-8 |
针数: | 8 | Reach Compliance Code: | compliant |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 14 weeks |
风险等级: | 1.59 | 系列: | 3G |
JESD-30 代码: | R-PDSO-N8 | JESD-609代码: | e4 |
长度: | 1.45 mm | 负载电容(CL): | 15 pF |
逻辑集成电路类型: | INVERTER | 最大I(ol): | 0.008 A |
湿度敏感等级: | 1 | 功能数量: | 3 |
输入次数: | 1 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VSON |
封装等效代码: | SOLCC8,.04,14 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, VERY THIN PROFILE | 包装方法: | TAPE AND REEL |
电源: | 1.8/5 V | Prop。Delay @ Nom-Sup: | 9.1 ns |
传播延迟(tpd): | 9.1 ns | 认证状态: | Not Qualified |
施密特触发器: | YES | 座面最大高度: | 0.55 mm |
子类别: | Gates | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.65 V | 标称供电电压 (Vsup): | 2.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | NO LEAD | 端子节距: | 0.35 mm |
端子位置: | DUAL | 宽度: | 1 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NLX3G16 | ONSEMI |
获取价格 |
Triple Non-Inverting Buffer | |
NLX3G16_16 | ONSEMI |
获取价格 |
Triple Non-Inverting Buffer | |
NLX3G16AMX1TCG | ONSEMI |
获取价格 |
Triple Non-Inverting Buffer | |
NLX3G16BMX1TCG | ONSEMI |
获取价格 |
Triple Non-Inverting Buffer | |
NLX3G16CMX1TCG | ONSEMI |
获取价格 |
Triple Non-Inverting Buffer | |
NLX3G16DMUTCG | ONSEMI |
获取价格 |
Triple Non-Inverting Buffer | |
NLX3G16EMUTCG | ONSEMI |
获取价格 |
Triple Non-Inverting Buffer | |
NLX3G16FMUTCG | ONSEMI |
获取价格 |
Triple Non-Inverting Buffer | |
NLX3G17 | ONSEMI |
获取价格 |
Triple Non-Inverting Schmitt-Trigger Buffer | |
NLX3G17AMX1TCG | ONSEMI |
获取价格 |
Triple Non-Inverting Schmitt-Trigger Buffer |