NIS6201DR2G

更新时间： 2024-09-13 03:46:31

品牌	Logo	应用领域
安森美 - ONSEMI		泵
页数	文件大小	规格书
8页	70K
描述
Floating, Regulated Charge Pump

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NIS6201DR2G 数据手册

NIS6201

Floating, Regulated Charge

Pump

The NIS6201 charge pump is designed to provide economical, low

level power to circuits above ground level potential, such as the drive

for ORing diodes. It is a very cost−effective replacement for a small,

isolated, switching power supply.

http://onsemi.com

It contains an internal linear regulator, and a versatile charge pump

to allow bias voltage supplies to be transferred from a ground

referenced source to a higher potential. The design of the charge

pump allows for any isolation voltage required, as the high voltage

components are external to the pump and can be sized accordingly.

MARKING

DIAGRAM

6201

AYWW

SOIC−8 NB

CASE 751

Features

• Integrated Linear Regulator and Charge Pump

• Thermal Limit Protection

• Adjustable Voltage Output

• High Voltage Isolation

6201

= Specific Device Code

= Assembly Location

= Year

= Work Week

• This is a Pb−Free Device

= Pb−Free Package

Applications

• ORing Diodes

PIN CONNECTIONS

• Floating Supervisory Circuits

• LED Driver

N/C

PWRGND

DRIVE

N/C

SIGGND

COMP

REG

(Top View)

0.50 V

Regulator

ORDERING INFORMATION

−

†

Device

Package

Shipping

15 V

NIS6201DR2G

SOIC−8

3000 / Tape & Reel

(Pb−Free)

Overcharge

−

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

150 mV

DRIVE

1.0 MHz

Oscillator

SIGGND

COMP

REG

PWRGND

Figure 1. Charge Pump Block Diagram

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

September, 2005 − Rev. 1

NIS6201/D

12 3 4 5 6 7 8

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