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NESG3031M05 PDF预览

NESG3031M05

更新时间: 2024-01-04 01:58:55
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
3页 102K
描述
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NESG3031M05 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SUPER MINIMOLD PACKAGE-4Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.25 pF集电极-发射极最大电压:4.3 V
配置:SINGLE最高频带:C BAND
JESD-30 代码:R-PDSO-F4JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON GERMANIUM
Base Number Matches:1

NESG3031M05 数据手册

 浏览型号NESG3031M05的Datasheet PDF文件第1页浏览型号NESG3031M05的Datasheet PDF文件第3页 
NESG3031M05  
ELECTRICAL CHARACHTERISTICS (TA = 25°C)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
DC Characteristics  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
ICBO  
VCB = 5 V, IE = 0 mA  
100  
100  
380  
nA  
nA  
IEBO  
VEB = 1 V, IC = 0 mA  
VCE = 2 V, IC = 6 mA  
Note 1  
hFE  
220  
300  
RF Characteristics  
|S21e|2  
NF  
VCE = 3 V, IC = 20 mA, f = 5.8 GHz  
6.0  
8.5  
dB  
dB  
Insertion Power Gain  
Noise Figure (1)  
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,  
ZS = ZSopt, ZL = ZLopt  
0.95  
Noise Figure (2)  
NF  
Ga  
Ga  
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,  
1.1  
10.0  
9.5  
1.5  
dB  
dB  
dB  
ZS = ZSopt, ZL = ZLopt  
Associated Gain (1)  
Associated Gain (2)  
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,  
ZS = ZSopt, ZL = ZLopt  
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,  
ZS = ZSopt, ZL = ZLopt  
7.5  
Note 2  
11.0  
Reverse Transfer Capacitance  
Maximum Stable Power Gain  
Cre  
VCB = 2 V, IE = 0 mA, f = 1 MHz  
0.15  
14.0  
13.0  
0.25  
pF  
dB  
MSGNote 3  
VCE = 3 V, IC = 20 mA, f = 5.8 GHz  
Gain  
1
dB Compression Output  
PO (1 dB)  
VCE = 3 V, IC (set) = 20 mA,  
dBm  
Power  
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt  
3rd Order Intermodulation  
OIP3  
VCE = 3 V, IC (set) = 20 mA,  
18.0  
dBm  
Distortion Output Intercept Point  
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt  
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%  
2. Collector to base capacitance when the emitter grounded  
S21  
3. MSG =  
S12  
hFE CLASSIFICATION  
RANK  
Marking  
hFE Value  
FB  
T1K  
220 to 380  

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