Datasheet > NESG270034-T1

NESG270034-T1

更新时间： 2024-01-24 14:52:35

品牌	Logo	应用领域
CEL		晶体晶体管输出元件
页数	文件大小	规格书
11页	330K
描述
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

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NESG270034-T1 技术参数

NESG270034

PACKAGE DIMENSIONS

3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)

4.5±0.1

1.6±0.2

1.5±0.1

+0.03

–0.06

0.41

0.42±0.06

0.47±0.06

1.5

0.42±0.06

3.0

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

Preliminary Data Sheet PU10577EJ01V0DS

1...5 6 789 10 11

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型号	品牌	获取价格	描述	数据表
NESG270034-T1-AZ	CEL	获取价格	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3
NESG270034-T1-AZ	RENESAS	获取价格	暂无描述
NESG270034-T1-AZ-FB	RENESAS	获取价格	TRANSISTOR RF POWER TRANSISTOR, BIP RF Power
NESG3031M05	NEC	获取价格	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NESG3031M05	CEL	获取价格	NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M05-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
NESG3031M05-A-FB	RENESAS	获取价格	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SUPER MINIMOLD, M05, 4 PIN
NESG3031M05-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
NESG3031M05-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
NESG3031M05-T1	NEC	获取价格	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR