Datasheet > 晶体管 > 射频小信号场效应晶体管> NE32484AS

NE32484AS

更新时间： 2024-11-09 03:46:43

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管放大器
页数	文件大小	规格书
5页	55K
描述
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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中文翻译

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数据手册

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NE32484AS 数据手册

ULTRA LOW NOISE

PSEUDOMORPHIC HJ FET

NE32484A

NOISE FIGURE & ASSOCIATED

FEATURES

GAIN vs. FREQUENCY

VDS = 2 V, IDS = 10 mA

• VERY LOW NOISE FIGURE:

0.6 dB typical at 12 GHz

1.4

1.2

• HIGH ASSOCIATED GAIN:

11 dB typical at 12 GHz

• LG = 0.25 µm, WG = 200 µm

• LOW COST METAL/CERAMIC PACKAGE

• TAPE & REEL PACKAGING OPTION AVAILABLE

0.8

0.6

0.4

DESCRIPTION

The NE32484A is a pseudomorphic Hetero-Junction FET that

uses the junction between Si-doped AlGaAs and undoped

InGaAs to create very high mobility electrons. The device

features mushroom shaped TiAl gates for decreased gate

resistance and improved power handling capabilities. The

mushroom gate also results in lower noise figure and high

associated gain. This device is housed in an epoxy-sealed,

metal/ceramic package and is intended for high volume

consumer and industrial applications.

0.2

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures as-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE32484A

84AS

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

NFOPT¹

Noise Figure, VDS = 2.0 V, ID = 10 mA,

f = 12 GHz

0.6

0.7

GA¹

Associated Gain, VDS = 2.0 V, ID = 10 mA, f = 12 GHz

10.0

11.0

P1dB

Output Power at 1 dB Gain Compression Point, f = 12 GHz

VDS = 2.0 V, IDS = 10 mA

dBm

8.5

11.0

VDS = 2.0 V, IDS = 20 mA

G1dB

Gain at P1dB, f = 12 GHz

VDS = 2.0 V, IDS = 10 mA

VDS = 2.0 V, IDS = 20 mA

10.0

10.5

IDSS

Saturated Drain Current, VDS = 2.0 V, VGS = 0 V

Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA

Transconductance, VDS = 2.0 V, ID = 10 mA

Gate to Source Leakage Current, VGS = -3.0 V, ID = 0 mA

Thermal Resistance (Channel to Ambient)

Thermal Resistance (Channel to Case)

-2.0

-0.8

-0.2

IGSO

µA

0.5

750

10.0

350

RTH (CH-A)

RTH (CH-C)

°C/W

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not for each specimen.

California Eastern Laboratories

12 3 4 5

中文翻译

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与NE32484AS相关器件

型号	品牌	获取价格	描述	数据表
NE32484A-SL	NEC	获取价格	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32484A-T1	NEC	获取价格	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32484A-T1	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
NE32484A-T1A	NEC	获取价格	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32484A-T2	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
NE32500	NEC	获取价格	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NE32500	CEL	获取价格	C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
NE32500	RENESAS	获取价格	KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET, DIE-4
NE32500M	CEL	获取价格	C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
NE32500M	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel,

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