是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | DISK BUTTON, O-XRDB-G4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.17 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 3 V |
最大漏极电流 (ID): | 0.015 A | FET 技术: | HETERO-JUNCTION |
最高频带: | KU BAND | JESD-30 代码: | O-XRDB-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
峰值回流温度(摄氏度): | 230 | 极性/信道类型: | N-CHANNEL |
最小功率增益 (Gp): | 12 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | RADIAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NE3210S01-T1B | CEL |
功能相似 ![]() |
SUPER LOW NOISE HJ FET |
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NE3210S01-T1 | CEL |
功能相似 ![]() |
SUPER LOW NOISE HJ FET |
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NE3210S01 | CEL |
功能相似 ![]() |
SUPER LOW NOISE HJ FET |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE3210S01-T1-A | RENESAS |
获取价格 |
TRANSISTOR,HEMT,N-CHAN,4V V(BR)DSS,15MA I(DSS),SOT-173X |
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NE3210S01-T1B | NEC |
获取价格 |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
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NE3210S01-T1B | CEL |
获取价格 |
SUPER LOW NOISE HJ FET |
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NE32183A | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 12MA I(DSS) | MICRO-X |
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NE32184A | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 12MA I(DSS) | MACRO-X |
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NE32400 | NEC |
获取价格 |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
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NE32400_98 | NEC |
获取价格 |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
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NE32400M | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-jun |
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NE32400N | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-jun |
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NE32484A | NEC |
获取价格 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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