是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SOIC | 包装说明: | SC-82AB, SC-70, 4 PIN |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
Factory Lead Time: | 1 week | 风险等级: | 5.37 |
可调性: | FIXED | 最大回动电压 1: | 0.5 V |
标称回动电压 1: | 0.28 V | 最大绝对输入电压: | 6 V |
最大输入电压: | 6 V | 最小输入电压: | 3.8 V |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
长度: | 2 mm | 最大电网调整率: | 0.02% |
最大负载调整率: | 0.04% | 湿度敏感等级: | 1 |
功能数量: | 1 | 输出次数: | 1 |
端子数量: | 4 | 工作温度TJ-Max: | 150 °C |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
最大输出电流 1: | 0.1 A | 最大输出电压 1: | 2.912 V |
最小输出电压 1: | 2.688 V | 标称输出电压 1: | 2.8 V |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP |
封装等效代码: | SOT-343R | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 包装方法: | TAPE AND REEL |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
调节器类型: | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR | 筛选级别: | AEC-Q100 |
座面最大高度: | 1.1 mm | 子类别: | Other Regulators |
表面贴装: | YES | 技术: | CMOS |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子节距: | 1.3 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 最大电压容差: | 2% |
宽度: | 1.25 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NCV663SQ30T1 | ONSEMI |
获取价格 |
100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV663SQ30T1G | ONSEMI |
获取价格 |
100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV663SQ30T1G | ROCHESTER |
获取价格 |
3V FIXED POSITIVE LDO REGULATOR, 0.42V DROPOUT, PDSO4, LEAD FREE, SC-82AB, SC-70, 4 PIN | |
NCV663SQ33T1 | ONSEMI |
获取价格 |
100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV663SQ33T1G | ONSEMI |
获取价格 |
100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV663SQ33T1G | ROCHESTER |
获取价格 |
3.3V FIXED POSITIVE LDO REGULATOR, 0.42V DROPOUT, PDSO4, LEAD FREE, SC-82AB, SC-70, 4 PIN | |
NCV663SQ50T1 | ONSEMI |
获取价格 |
100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV663SQ50T1G | ONSEMI |
获取价格 |
100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV68061SNAIT1G | ONSEMI |
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Ideal Diode NMOS Controller | |
NCV68261MTWAITBG | ONSEMI |
获取价格 |
Ideal Diode and High Side Switch NMOS Controller |