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NCEP02T11D
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Gate resistance
BVDSS
IDSS
VGS=0V ID=250μA
VDS=200V,VGS=0V
VGS=±20V,VDS=0V
200
-
1
V
-
-
-
-
μA
nA
IGSS
±100
VGS(th)
RDS(ON)
RG
VDS=VGS,ID=250μA
2.5
-
4.5
V
mΩ
Ω
VGS=10V, ID=55A
9.4
3.8
-
10.5
-
-
-
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
gFS
VDS=10V,ID=55A
70
S
Clss
Coss
Crss
-
-
-
6635
450.6
11
-
-
-
PF
PF
PF
VDS=100V,VGS=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19.5
28
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=100V,ID=55A
GS=10V,RG=4.7Ω
V
Turn-Off Delay Time
48
Turn-Off Fall Time
15
Total Gate Charge
Qg
Qgs
Qgd
89.5
40.5
15.7
VDS=100V,ID=55A,
GS=10V
Gate-Source Charge
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=110A
-
-
-
-
1.2
V
A
-
110
trr
TJ = 25°C, IF = 55A
di/dt = 100A/μs(Note3)
184
1.96
nS
uC
Reverse Recovery Charge
Qrr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Co., Ltd
Page 2
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