NCEP035N12,NCEP035N12D
NCE N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
General Features
● VDS =120V,ID =190A
RDS(ON)=3.0mΩ , typical (TO-220)@ VGS=10V
RDS(ON)=2.8mΩ , typical (TO-263)@ VGS=10V
R
DS(ON) and Qg. This device is ideal for high-frequency switching
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
and synchronous rectification.
Application
● DC/DC Converter
100% UIS TESTED!
●Ideal for high-frequency switching and synchronous
rectification
100% ∆Vds TESTED!
TO-220
TO-263
Schematic Diagram
Package Marking and Ordering Information
Device Marking
NCEP035N12
NCEP035N12D
Device
Device Package
Reel Size
Tape width
Quantity
NCEP035N12
NCEP035N12D
TO-220
-
-
-
-
-
-
TO-263-2L
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
120
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
190
135
760
300
2
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
A
Maximum Power Dissipation
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
W/℃
mJ
℃
EAS
2300
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.5
℃/W
Wuxi NCE Power Co., Ltd
Page1
V2.0
http://www.ncepower.com