NCEP030N12,NCEP030N12D
NCE N-Channel Super Trench II Power MOSFET
Description
General Features
● VDS =120V,ID =215A
The series of devices uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(ON)=2.4mΩ , typical (TO-220)@ VGS=10V
RDS(ON)=2.2mΩ , typical (TO-263)@ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
R
DS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification.
Application
● DC/DC Converter
●Ideal for high-frequency switching and synchronous
100% UIS TESTED!
100% ∆Vds TESTED!
rectification
TO-263
TO-220
Schematic Diagram
Package Marking and Ordering Information
Device Marking
NCEP030N12
NCEP030N12D
Device
Device Package
Reel Size
Tape width
Quantity
NCEP030N12
NCEP030N12D
TO-220
-
-
-
TO-263
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
120
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
215
150
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
860
A
Maximum Power Dissipation
340
W
PD
Derating factor
Single pulse avalanche energy (Note 4)
2.27
2332
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
Page1
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http://www.ncepower.com