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NCEP030N12 PDF预览

NCEP030N12

更新时间: 2024-05-07 20:39:22
品牌 Logo 应用领域
新洁能 - NCEPOWER 栅极
页数 文件大小 规格书
8页 500K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻(RDS(on))与超低栅极电荷(Qg)的特点,结合先进轻巧紧凑的封装进一步提高了系统的功率密

NCEP030N12 数据手册

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NCEP030N12,NCEP030N12D  
NCE N-Channel Super Trench II Power MOSFET  
Description  
General Features  
VDS =120V,ID =215A  
The series of devices uses Super Trench II technology that is  
uniquely optimized to provide the most efficient high frequency  
switching performance. Both conduction and switching power  
losses are minimized due to an extremely low combination of  
RDS(ON)=2.4m, typical (TO-220)@ VGS=10V  
RDS(ON)=2.2m, typical (TO-263)@ VGS=10V  
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
175 °C operating temperature  
Pb-free lead plating  
R
DS(ON) and Qg. This device is ideal for high-frequency switching  
and synchronous rectification.  
Application  
DC/DC Converter  
Ideal for high-frequency switching and synchronous  
100% UIS TESTED!  
100% Vds TESTED!  
rectification  
TO-263  
TO-220  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
NCEP030N12  
NCEP030N12D  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCEP030N12  
NCEP030N12D  
TO-220  
-
-
-
TO-263  
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
120  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
VDS  
±20  
VGS  
215  
150  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
860  
A
Maximum Power Dissipation  
340  
W
PD  
Derating factor  
Single pulse avalanche energy (Note 4)  
2.27  
2332  
W/℃  
mJ  
EAS  
Operating Junction and Storage Temperature Range  
-55 To 175  
TJ,TSTG  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  
http://www.ncepower.com  

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