Datasheet > NCEP035N60AK

NCEP035N60AK

更新时间： 2024-04-09 18:59:22

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
7页	717K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP035N60AK 数据手册

http://www.ncepower.com

NCEP035N60AK

NCE N-Channel Super Trench II Power MOSFET

Description

General Features

The NCEP035N60AK uses Super Trench II technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

● V_DS=60V,I_D=130A

R_DS(ON)=2.8mΩ (typical) @ V_GS=10V

R_DS(ON)=3.5mΩ (typical) @ V_GS=4.5V

● Excellent gate charge x R_DS(on)product(FOM)

R_DS(ON)and Q_g. This device is ideal for high-frequency switching ● Very low on-resistance R_DS(on)

and synchronous rectification.

● 150 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous rectification

100% UIS TESTED!

100% ΔVds TESTED!

TO-252

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP035N60AK

TO-252-2L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

130

I_D

I_D(100℃)

I_DM

100

520

Maximum Power Dissipation

140

P_D

Derating factor

0.93

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

520

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

1.07

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

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