Datasheet > NCE65R360

NCE65R360

更新时间： 2022-02-26 12:14:25

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
10页	673K
描述
N-Channel Super Junction Power MOSFET ll

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数据手册

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NCE65R360 数据手册

NCE65R360D,NCE65R360,NCE65R360F

NCE65R360D

Parameter

Symbol

NCE65R360F

Unit

NCE65R360

Drain Source voltage slope, V_DS≤480 V,

Reverse diode dv/dt，V_DS≤480 V,I_SD<I_D

Operating Junction and Storage Temperature Range

* limited by maximum junction temperature

dv/dt

V/ns

-55...+150

°C

T_J,T_STG

Table 2. Thermal Characteristic

Parameter

NCE65R360D

NCE65R360

1.03

Symbol

NCE65R360F

Unit

Thermal Resistance，Junction-to-Case（Maximum）

Thermal Resistance，Junction-to-Ambient （Maximum）

R_thJC

R_thJA

3.82

°C /W

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max Unit

On/off states

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current(Tc=25℃)

Zero Gate Voltage Drain Current(Tc=125℃)

Gate-Body Leakage Current

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=650V,V_GS=0V

V_GS=±30V,V_DS=0V

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=7A

650

0.05

μA

I_DSS

100

±100

3.5

I_GSS

V_GS(th)

R_DS(ON)

2.5

Drain-Source On-State Resistance

Dynamic Characteristics

Forward Transconductance

Input Capacitance

300

360

mΩ

g_FS

C_lss

C_oss

C_rss

Q_g

V_DS= 20V, I_D= 7A

1030

4.5

5.7

Ω

V_DS=50V,V_GS=0V,

Output Capacitance

F=1.0MHz

Reverse Transfer Capacitance

Total Gate Charge

V_DS=480V,I_D=11A,

Gate-Source Charge

Q_gs

Q_gd

R_G

V_GS=10V

Gate-Drain Charge

Intrinsic gate resistance

f = 1 MHz open drain

Switching times

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=380V,I_D=5.5A,

R_G=6.8Ω,V_GS=10V

Turn-Off Delay Time

4.5

Turn-Off Fall Time

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

Pulsed Source-drain current(Body Diode)

Forward on voltage

I_SD

I_SDM

V_SD

t_rr

T_C=25°C

Tj=25°C,I_SD=11A,V_GS=0V

0.9

245

2.4

1.2

Reverse Recovery Time

Tj=25°C,I_F=11A,di/dt=100A/μs

Reverse Recovery Charge

Peak Reverse Recovery Current

Q_rr

I_rrm

Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2. Tj=25℃,VDD=50V,VG=10V, R_G=25Ω

Wuxi NCE Power Semiconductor Co., Ltd

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http://www.ncepower.com

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