Datasheet > NCE25G120T

NCE25G120T

更新时间： 2022-11-27 10:49:50

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
8页	428K
描述
1200V, 25A, Trench NPT IGBT

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NCE25G120T 数据手册

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NCE25G120T

http://www.ncepower.com

NCE25G120T

1200V, 25A, Trench NPT IGBT

Features

Trench NPT( Non Punch Through) IGBT

High speed switching

Low saturation voltage: V_CE(sat)=2.0V@I_C=25A

High input impedance

G C E

Applications

Inductive heating, Microwave oven, Inverter, UPS, etc.

Soft switching applications

General Description

Using advanced Trench NPT technology, NCE’s 1200V

IGBTs offers superior conduction and switching performances,

and easy parallel operation with exceptional avalanche rugged-

ness. This device is designed for soft switching applications.

Absolute Maximum Ratings

Symbol Description

Ratings

Units

V_CES

V_GES

Collector to Emitter Voltage

1200

+/-25

Gate to Emitter Voltage

Continuous Collector Current @T_C=25°C

Continuous Collector Current @T_C=100°C

Pulsed Collector Current

I_C

I_CM(1)

P_D

Maximum Power Dissipation @T_C=25°C

Maximum Power Dissipation @T_C=100°C

Operating Junction Temperature

Storage Temperature Range

312

°C

125

T_J

-55 to +150

T_stg

Maximum Lead Temp. for soldering Purposes, 1/8" from

case for 5seconds

T_L

300

°C

Notes:

1. Repetitive rating, Pulse width limited by max. junction temperature

共8 页，第1 页

12 3 4 5 6 7 8

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