Datasheet > NCE25TD120BT

NCE25TD120BT

更新时间： 2024-03-03 10:09:41

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关双极性晶体管
页数	文件大小	规格书
6页	357K
描述
新洁能提供击穿电压等级范围为1200V至1350V的N沟道IGBT器件。通过工艺与器件结构优化，新洁能提供高能效的IGBT产品。在导通压降与开关损耗之间做出了良好的权衡，能够大幅度提高系统效率。同

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NCE25TD120BT 数据手册

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NCE25TD120BT

1200V, 25A, Trench FS II Fast IGBT

General Description:

Using NCE's proprietary trench design and advanced FS (Field Stop) second

generation technology, the 1200V Trench FSII IGBT offers superior conduction and

switching performances, and easy parallel operation;

Features

⚫ Trench FSII Technology offering

⚫ Very low V_CE(sat)

⚫ Positive temperature coefficient in V_CE(sat)

⚫ Very tight parameter distribution

⚫ High ruggedness, temperature stable behavior

Schematic diagram

Application

⚫ Inverters

⚫ Motor drives

⚫ Converter

Package Marking and Ordering Information

Device

Device Package

Device Marking

NCE25TD120BT

TO-247

NCE25TD120BT

TO-247

Absolute Maximum Ratings (T_C=25°C unless otherwise noted)

Symbol

V_CES

Parameter

Value

Units

Collector-Emitter Voltage

1200

±30

V_GES

Gate- Emitter Voltage

Collector Current

I_C

Collector Current @T_C= 100 °C

I_Cpuls

Pulsed Collector Current，t_plimited by T_jmax

turn off safe operating area，V_CE=1200V，Tj=150°C

Diode Continuous Forward Current @T_C= 100 °C

Diode Maximum Forward Current

I_F

I_FM

Power Dissipation @ T_C= 25°C

365

°C

P_D

Power Dissipation @T_C= 100 °C

183

T_J,T_stg

T_L

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

-55 to +175

260

Short circuit withstand time V_GE=15.0V, V_CC≤600V,

Allowed number of short circuits<1000Time between

short circuits:≥1.0s,T_j≤150°C

t_sc

Wuxi NCE Power Co., Ltd

Page

V2.0

http://www.ncepower.com

12 3 4 5 6

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