Pb Free Product
NCE25TD120VD
1200V, 25A, Trench FS II Fast IGBT
General Description
Using NCE's proprietary trench design and advanced FS (Field Stop) second
generation technology, the 1200V Trench FSII IGBT offers superior conduction and
switching performances, and easy parallel operation;
Features
Trench FSII Technology offering
Very low VCE(sat)
High speed switching
Positive temperature coefficient in VCE(sat)
Very tight parameter distribution
High ruggedness, temperature stable behavior
Schematic diagram
Application
PV power
Three-level Solar String Inverter
UPS
Package Marking and Ordering Information
Device
Device Package
Device Marking
NCE25TD120VD
TO-263
NCE25TD120VD
TO-263
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Symbol
VCES
Parameter
Value
Units
V
Collector-Emitter Voltage
1200
±30
VGES
Gate- Emitter Voltage
V
Collector Current
50
A
IC
Collector Current @TC = 100 °C
25
A
ICpuls
-
Pulsed Collector Current,tp limited by Tjmax
turn off safe operating area,VCE=1200V,TJ=175°C
Diode Continuous Forward Current @TC = 100 °C
Diode Maximum Forward Current
100
A
100
A
IF
25
A
IFM
100
A
Power Dissipation @ TC = 25°C
365
W
W
°C
°C
PD
Power Dissipation @TC = 100 °C
183
TJ,Tstg
TL
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
-55 to +175
260
Wuxi NCE Power Co., Ltd
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