Datasheet > NAND08GR4B2AN1

NAND08GR4B2AN1

更新时间： 2024-10-28 08:47:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		光电二极管
页数	文件大小	规格书
57页	887K
描述
Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NAND08GR4B2AN1 数据手册

NAND01G-B, NAND02G-B,

NAND04G-B, NAND08G-B

1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit

2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

PRELIMINARY DATA

FEATURES SUMMARY

■

HIGH DENSITY NAND FLASH MEMORIES

Figure 1. Packages

–

Up to 8 Gbit memory array

Up to 64Mbit spare area

Cost effective solutions for mass storage

applications

■

NAND INTERFACE

TSOP48 12 x 20mm

–

x8 or x16 bus width

Multiplexed Address/ Data

Pinout compatibility for all densities

FBGA

■

SUPPLY VOLTAGE

–

1.8V device: V = 1.7 to 1.95V

VFBGA63 9.5 x 12 x 1mm

TFBGA63 9.5 x 12 x 1.2mm

3.0V device: V = 2.7 to 3.6V

PAGE SIZE

–

x8 device: (2048 + 64 spare) Bytes

x16 device: (1024 + 32 spare) Words

■

DATA PROTECTION

–

Hardware and Software Block Locking

Hardware Program/Erase locked during

Power transitions

BLOCK SIZE

–

x8 device: (128K + 4K spare) Bytes

x16 device: (64K + 2K spare) Words

DATA INTEGRITY

PAGE READ / PROGRAM

–

100,000 Program/Erase cycles

10 years Data Retention

RoHS COMPLIANCE

Lead-Free Components are Compliant

with the RoHS Directive

DEVELOPMENT TOOLS

–

Random access: 25µs (max)

Sequential access: 50ns (min)

Page program time: 300µs (typ)

■

–

■

COPY BACK PROGRAM MODE

Fast page copy without external buffering

–

CACHE PROGRAM AND CACHE READ

MODES

–

Error Correction Code software and

hardware models

Bad Blocks Management and Wear

Leveling algorithms

PC Demo board with simulation software

File System OS Native reference software

Hardware simulation models

–

Internal Cache Register to improve the

program and read throughputs

–

■

FAST BLOCK ERASE

Block erase time: 2ms (typ)

–

■

STATUS REGISTER

ELECTRONIC SIGNATURE

CHIP ENABLE ‘DON’T CARE’

–

for simple interface with microcontroller

■

SERIAL NUMBER OPTION

October 2005

1/57

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...57

中文翻译

下载PDF

与NAND08GR4B2AN1相关器件

型号	品牌	获取价格	描述	数据表
NAND08GR4B2AN1E	STMICROELECTRONICS	获取价格	Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GR4B2AN1F	STMICROELECTRONICS	获取价格	Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GR4B2AN1T	STMICROELECTRONICS	获取价格	512MX16 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND08GR4B2AN6	STMICROELECTRONICS	获取价格	Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND08GR4B2AN6E	STMICROELECTRONICS	获取价格	512MX16 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GR4B2AN6F	STMICROELECTRONICS	获取价格	512MX16 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GR4B2BN1	STMICROELECTRONICS	获取价格	Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND08GR4B2BN1E	STMICROELECTRONICS	获取价格	512MX16 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GR4B2BN1F	STMICROELECTRONICS	获取价格	512MX16 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GR4B2BN1T	STMICROELECTRONICS	获取价格	512MX16 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

与NAND08GR4B2AN1相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

9
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

6
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

35
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

44

产品中心

服务支持

精选活动

关于我们

帮助中心

NAND08GR4B2AN1

NAND08GR4B2AN1 数据手册

与NAND08GR4B2AN1相关器件

与NAND08GR4B2AN1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NAND08GR4B2AN1

NAND08GR4B2AN1 数据手册

与NAND08GR4B2AN1相关器件

与NAND08GR4B2AN1相关文章

您还可以找

您在本页遇到什么问题？