生命周期: | Transferred | 零件包装代码: | TSOP |
包装说明: | TSSOP, | 针数: | 48 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.51 |
最长访问时间: | 25000 ns | JESD-30 代码: | R-PDSO-G48 |
长度: | 18.4 mm | 内存密度: | 4294967296 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 536870912 words | 字数代码: | 512000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 512MX8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
并行/串行: | PARALLEL | 编程电压: | 1.8 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 宽度: | 12 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NAND08GR4B2CN6F | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR4B2CN6T | STMICROELECTRONICS |
获取价格 |
512MX16 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND08GR4B2CZB1E | STMICROELECTRONICS |
获取价格 |
512MX16 FLASH 1.8V PROM, 25000ns, PBGA63, 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, ROHS | |
NAND08GR4B2CZB1F | STMICROELECTRONICS |
获取价格 |
Flash, 512MX16, 25000ns, PBGA63, 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIAN | |
NAND08GR4B2CZB1T | STMICROELECTRONICS |
获取价格 |
512MX16 FLASH 1.8V PROM, 25000ns, PBGA63, 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, TFBG | |
NAND08GR4B2CZC6F | STMICROELECTRONICS |
获取价格 |
Flash, 512MX16, 35ns, PBGA63, 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, | |
NAND08GR4B2CZL1E | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR4B2CZL1F | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR4B2CZL6E | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GR4B2CZL6F | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash |