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N283CH04HOO PDF预览

N283CH04HOO

更新时间: 2024-11-05 19:35:11
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 425K
描述
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element

N283CH04HOO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
关态电压最小值的临界上升速率:400 V/us最大直流栅极触发电流:150 mA
最大直流栅极触发电压:3 V最大维持电流:500 mA
JESD-30 代码:O-CEDB-N2通态非重复峰值电流:9280 A
元件数量:1端子数量:2
最大通态电流:752000 A最高工作温度:125 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:1180.64 A重复峰值关态漏电流最大值:40000 µA
断态重复峰值电压:400 V重复峰值反向电压:400 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:SCRBase Number Matches:1

N283CH04HOO 数据手册

 浏览型号N283CH04HOO的Datasheet PDF文件第2页浏览型号N283CH04HOO的Datasheet PDF文件第3页 

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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1
N283CH08GOO IXYS

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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1
N283CH08HOO IXYS

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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1
N283CH08JOO IXYS

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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1