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N283CH08JOO PDF预览

N283CH08JOO

更新时间: 2024-11-05 19:35:11
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 425K
描述
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element

N283CH08JOO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
关态电压最小值的临界上升速率:500 V/us最大直流栅极触发电流:150 mA
最大直流栅极触发电压:3 V最大维持电流:500 mA
JESD-30 代码:O-CEDB-N2通态非重复峰值电流:9280 A
元件数量:1端子数量:2
最大通态电流:752000 A最高工作温度:125 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:1180.64 A重复峰值关态漏电流最大值:40000 µA
断态重复峰值电压:800 V重复峰值反向电压:800 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:SCRBase Number Matches:1

N283CH08JOO 数据手册

 浏览型号N283CH08JOO的Datasheet PDF文件第2页浏览型号N283CH08JOO的Datasheet PDF文件第3页 

与N283CH08JOO相关器件

型号 品牌 获取价格 描述 数据表
N283CH08KOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1
N283CH08LOO IXYS

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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1
N283CH12 IXYS

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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM),
N283CH12GOO IXYS

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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM),
N283CH12HOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM),
N283CH12JOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM),
N283CH12KOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM),
N283CH12LOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM),
N283CH14 IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1400V V(DRM), 1400V V(RRM),
N283CH14HOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1400V V(DRM), 1400V V(RRM),