生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 500 V/us | 最大直流栅极触发电流: | 150 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 500 mA |
JESD-30 代码: | O-CEDB-N2 | 通态非重复峰值电流: | 9280 A |
元件数量: | 1 | 端子数量: | 2 |
最大通态电流: | 752000 A | 最高工作温度: | 125 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 1180.64 A | 重复峰值关态漏电流最大值: | 40000 µA |
断态重复峰值电压: | 800 V | 重复峰值反向电压: | 800 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
N283CH08KOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1 | |
N283CH08LOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1 | |
N283CH12 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM), | |
N283CH12GOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM), | |
N283CH12HOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM), | |
N283CH12JOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM), | |
N283CH12KOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM), | |
N283CH12LOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM), | |
N283CH14 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1400V V(DRM), 1400V V(RRM), | |
N283CH14HOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1400V V(DRM), 1400V V(RRM), |