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N283CH06LOO PDF预览

N283CH06LOO

更新时间: 2024-11-05 19:35:11
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 425K
描述
Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element

N283CH06LOO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:150 mA最大直流栅极触发电压:3 V
最大维持电流:500 mAJESD-30 代码:O-CEDB-N2
通态非重复峰值电流:9280 A元件数量:1
端子数量:2最大通态电流:752000 A
最高工作温度:125 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:1180.64 A
重复峰值关态漏电流最大值:40000 µA断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

N283CH06LOO 数据手册

 浏览型号N283CH06LOO的Datasheet PDF文件第2页浏览型号N283CH06LOO的Datasheet PDF文件第3页 

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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM),
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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM),
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Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 1200V V(DRM), 1200V V(RRM),