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N256S0818HDAT2-25I PDF预览

N256S0818HDAT2-25I

更新时间: 2024-11-28 15:45:47
品牌 Logo 应用领域
AMI /
页数 文件大小 规格书
15页 201K
描述
N256S0818HDAT2-25I

N256S0818HDAT2-25I 数据手册

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AMI Semiconductor, Inc.  
ULP Memory Solutions  
N256S0818HDA/N256S0830HDA  
Advance Information  
670 North McCarthy Blvd. Suite 220  
Milpitas, CA 95035  
PH: 408-935-7777, FAX: 408-935-7770  
256Kb Low Power Serial SRAMs  
32K × 8 bit Organization  
Overview  
Features  
The AMI Semiconductor serial SRAM family  
includes several integrated memory devices  
including this 256Kb serially accessed Static  
Random Access Memory, internally organized as  
32K words by 8 bits. The devices are designed and  
fabricated using AMI’s advanced CMOS  
• Power Supply Options  
1.8V to 3.6V  
• Very low standby current  
As low as 200nA  
• Very low operating current  
As low as 500uA  
technology to provide both high-speed  
performance and low power. The devices operate  
with a single chip select (CS) input and use a  
simple Serial Peripheral Interface (SPI) serial bus.  
A single data in and data out line is used along with  
a clock to access data within the devices. The  
N256S08xxHDA devices include a HOLD pin that  
allows communication to the device to be paused.  
While paused, input transitions will be ignored.  
The devices can operate over a wide temperature  
• Simple memory control  
Single chip select (CS)  
Serial input (SI) and serial output (SO)  
• Flexible operating modes  
Word read and write  
Page mode (32 word page)  
Burst mode (full array)  
• Organization  
32K x 8 bit  
o
o
range of -40 C to +85 C and can be available in  
• Self timed write cycles  
several standard package offerings.  
• Built-in write protection (CS high)  
• HOLD pin for pausing communication  
• High reliability  
Unlimited write cycles  
• RoHS Compliant Packages  
Green SOIC and TSSOP  
Device Options  
Typical  
Power  
Speed  
Read/Write  
Part Number  
Density  
Feature  
Standby  
Current  
Supply (V)  
(MHz)  
Operating Current  
N256S0818HDA  
N256S0830HDA  
1.8  
3.0  
20  
25  
200nA  
1uA  
256Kb  
HOLD  
500 uA @ 1Mhz  
1
This is a developmental specification and is subject to change without notice.  

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