5秒后页面跳转
N257CH26GOO PDF预览

N257CH26GOO

更新时间: 2024-09-25 19:16:43
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 425K
描述
Silicon Controlled Rectifier, 957.7A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element

N257CH26GOO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE最大直流栅极触发电流:300 mA
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:957.7 A
断态重复峰值电压:2600 V重复峰值反向电压:2600 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

N257CH26GOO 数据手册

 浏览型号N257CH26GOO的Datasheet PDF文件第2页浏览型号N257CH26GOO的Datasheet PDF文件第3页 

与N257CH26GOO相关器件

型号 品牌 获取价格 描述 数据表
N257CH26HOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element
N257CH26JOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element
N257CH28GOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element
N257CH30 IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element
N257CH32GOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element
N257CH32HOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element
N257CH32JOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element
N257CH32KOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element
N257CH34HOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3400V V(DRM), 3400V V(RRM), 1 Element
N257CH34JOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3400V V(DRM), 3400V V(RRM), 1 Element