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N257CH28GOO PDF预览

N257CH28GOO

更新时间: 2024-11-28 19:16:43
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 425K
描述
Silicon Controlled Rectifier, 957.7A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element

N257CH28GOO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
最大直流栅极触发电流:300 mAJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:957.7 A断态重复峰值电压:2800 V
重复峰值反向电压:2800 V表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:SCRBase Number Matches:1

N257CH28GOO 数据手册

 浏览型号N257CH28GOO的Datasheet PDF文件第2页浏览型号N257CH28GOO的Datasheet PDF文件第3页 

与N257CH28GOO相关器件

型号 品牌 获取价格 描述 数据表
N257CH30 IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element
N257CH32GOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element
N257CH32HOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element
N257CH32JOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element
N257CH32KOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element
N257CH34HOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3400V V(DRM), 3400V V(RRM), 1 Element
N257CH34JOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3400V V(DRM), 3400V V(RRM), 1 Element
N257CH36GOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element
N257CH40 IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 4000V V(DRM), 4000V V(RRM), 1 Element
N257CH40GOO IXYS

获取价格

Silicon Controlled Rectifier, 957.7A I(T)RMS, 4000V V(DRM), 4000V V(RRM), 1 Element