Datasheet > N25Q00AA11G1240E

N25Q00AA11G1240E

更新时间： 2024-11-30 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
89页	1248K
描述
Legacy NOR Flash

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中文翻译

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数据手册

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N25Q00AA11G1240E 数据手册

1Gb, 3V, Multiple I/O Serial NOR Flash Memory

Features

Micron Serial NOR Flash Memory

3V, Multiple I/O, 4KB Sector Erase

N25Q00AA

• Write protection

– Software write protection applicable to every

64KB sector via volatile lock bit

– Hardware write protection: protected area size

defined by five nonvolatile bits (BP0, BP1, BP2,

BP3, and TB)

Features

• Stacked device (four 256Mb die)

• SPI-compatible serial bus interface

• Double transfer rate (DTR) mode

• 2.7–3.6V single supply voltage

• 108 MHz (MAX) clock frequency supported for all

protocols in single transfer rate (STR) mode

• 54 MHz (MAX) clock frequency supported for all

protocols in DTR mode

• Dual/quad I/O instruction provides increased

throughput up to 54 MB/s

• Supported protocols

– Extended SPI, dual I/O, and quad I/O

– DTR mode supported on all

• Execute-in-place (XIP) mode for all three protocols

– Configurable via volatile or nonvolatile registers

– Enables memory to work in XIP mode directly af-

ter power-on

• PROGRAM/ERASE SUSPEND operations

• Available protocols

– Additional smart protections, available upon re-

quest

• Electronic signature

– JEDEC-standard 2-byte signature (BA21h)

– Unique ID code (UID): 17 read-only bytes,

including: Two additional extended device ID

bytes to identify device factory options; and cus-

tomized factory data (14 bytes)

• Minimum 100,000 ERASE cycles per sector

• More than 20 years data retention

• Packages – JEDEC-standard, all RoHS-compliant

– L-PBGA-24b05/6mm x 8mm ( also known as

LBGA24 )

– SOP2-16/300 mils (also known as SO16W, SO16-

Wide, SOIC-16 )

– Available READ operations

– Quad or dual output fast read

– Quad or dual I/O fast read

• Flexible to fit application

– Configurable number of dummy cycles

– Output buffer configurable

• Software reset

• 3-byte and 4-byte addressability mode supported

• 64-byte, user-lockable, one-time programmable

(OTP) dedicated area

• Erase capability

– Subsector erase 4KB uniform granularity blocks

– Sector erase 64KB uniform granularity blocks

– Single die erase (32MB)

PDF: 09005aef8480cede

n25q_1gb_3V_65nm.pdf - Rev. M 03/14 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与N25Q00AA11G1240E相关器件

型号	品牌	获取价格	描述	数据表
N25Q00AA11G1240F	MICRON	获取价格	Legacy NOR Flash
N25Q00AA11GSF40F	MICRON	获取价格	Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
N25Q00AA11GSF40G	MICRON	获取价格	Legacy NOR Flash
N25Q00AA13G1240E	MICRON	获取价格	N25Q 1Gb, 3V, Multiple I/O Serial NOR Flash Memory
N25Q00AA13G1240F	MICRON	获取价格	N25Q 1Gb, 3V, Multiple I/O Serial NOR Flash Memory
N25Q00AA13GSF40F	MICRON	获取价格	N25Q 1Gb, 3V, Multiple I/O Serial NOR Flash Memory
N25Q00AA13GSF40G	MICRON	获取价格	N25Q 1Gb, 3V, Multiple I/O Serial NOR Flash Memory
N25Q016A11E5140F	MICRON	获取价格	N25Q016A11E
N25Q016A11EF640E	MICRON	获取价格	N25Q016A11E
N25Q016A11EF640F	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,

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