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N256S0830HDAT225 PDF预览

N256S0830HDAT225

更新时间: 2024-09-24 15:45:47
品牌 Logo 应用领域
AMI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 201K
描述
Standard SRAM, 32KX8, 20ns, CMOS, PDSO8, 4.40 MM, GREEN, PLASTIC, TSSOP-8

N256S0830HDAT225 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:4.40 MM, GREEN, PLASTIC, TSSOP-8Reach Compliance Code:unknown
风险等级:5.77最长访问时间:20 ns
JESD-30 代码:R-PDSO-G8JESD-609代码:e3/e4
长度:4.4 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:8
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.1 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN/NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
Base Number Matches:1

N256S0830HDAT225 数据手册

 浏览型号N256S0830HDAT225的Datasheet PDF文件第2页浏览型号N256S0830HDAT225的Datasheet PDF文件第3页浏览型号N256S0830HDAT225的Datasheet PDF文件第4页浏览型号N256S0830HDAT225的Datasheet PDF文件第5页浏览型号N256S0830HDAT225的Datasheet PDF文件第6页浏览型号N256S0830HDAT225的Datasheet PDF文件第7页 
AMI Semiconductor, Inc.  
ULP Memory Solutions  
N256S0818HDA/N256S0830HDA  
Advance Information  
670 North McCarthy Blvd. Suite 220  
Milpitas, CA 95035  
PH: 408-935-7777, FAX: 408-935-7770  
256Kb Low Power Serial SRAMs  
32K × 8 bit Organization  
Overview  
Features  
The AMI Semiconductor serial SRAM family  
includes several integrated memory devices  
including this 256Kb serially accessed Static  
Random Access Memory, internally organized as  
32K words by 8 bits. The devices are designed and  
fabricated using AMI’s advanced CMOS  
• Power Supply Options  
1.8V to 3.6V  
• Very low standby current  
As low as 200nA  
• Very low operating current  
As low as 500uA  
technology to provide both high-speed  
performance and low power. The devices operate  
with a single chip select (CS) input and use a  
simple Serial Peripheral Interface (SPI) serial bus.  
A single data in and data out line is used along with  
a clock to access data within the devices. The  
N256S08xxHDA devices include a HOLD pin that  
allows communication to the device to be paused.  
While paused, input transitions will be ignored.  
The devices can operate over a wide temperature  
• Simple memory control  
Single chip select (CS)  
Serial input (SI) and serial output (SO)  
• Flexible operating modes  
Word read and write  
Page mode (32 word page)  
Burst mode (full array)  
• Organization  
32K x 8 bit  
o
o
range of -40 C to +85 C and can be available in  
• Self timed write cycles  
several standard package offerings.  
• Built-in write protection (CS high)  
• HOLD pin for pausing communication  
• High reliability  
Unlimited write cycles  
• RoHS Compliant Packages  
Green SOIC and TSSOP  
Device Options  
Typical  
Power  
Speed  
Read/Write  
Part Number  
Density  
Feature  
Standby  
Current  
Supply (V)  
(MHz)  
Operating Current  
N256S0818HDA  
N256S0830HDA  
1.8  
3.0  
20  
25  
200nA  
1uA  
256Kb  
HOLD  
500 uA @ 1Mhz  
1
This is a developmental specification and is subject to change without notice.  

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