Datasheet > MX29F080TC-70

MX29F080TC-70

更新时间： 2024-11-25 22:54:35

品牌	Logo	应用领域
旺宏电子 - Macronix		/
页数	文件大小	规格书
38页	607K
描述
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY

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中文翻译

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数据手册

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MX29F080TC-70 数据手册

PRELIMINARY

MX29F080

8M-BIT[1024Kx8]CMOSEQUALSECTORFLASHMEMORY

FEATURES

•

1,048,576 x 8 byte mode only stuction

Single power supply operation

- 5.0V only operation for read, erase and program

operation

Fast access time: 70/90/120ns

Low power consumption

- 30mA maximum active current

- 0.2uA typical standby current

and erase operation completion.

Ready/Busy (RY/BY)

- Provides a hardware methed of detecting program

and erase operation complation.

Sector Group protect/chip unprotect for 5V/12V sys-

tem.

Sector Group protection

- Hardware protect method for each group which con-

sists of two adjacent sectors

- Temporary sector group unprotect allows code

changes in previously locked sectors

10,000 minimum erase/program cycles

Latch-up protected to 100mA from -1V toVCC+1V

Low VCC write inhibit is equal to or less than 3.2V

Package type:

•

Command register architecture

- Byte Programming (7us typical)

- Sector Erase of 16 equal sector with 64K-Byte each

Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,

or program data to, another sector that is not being

erased, then resumes the erase.

Status Reply

•

- 40-pinTSOP or 44-pin SOP

•

Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

- Data polling & Toggle bit for detection of program

GENERAL DESCRIPTION

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

The MX29F080 is a 8-mega bit Flash memory organized

as 1024K bytes of 8 bits. MXIC's Flash memories offer

the most cost-effective and reliable read/write non-vola-

tile random access memory. The MX29F080 is pack-

aged in 40-pinTSOP or 44-pin SOP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

MXIC Flash technology reliably stores memory

contents even after 10,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and program mechanisms. In addition, the

combination of advanced tunnel oxide processing

and low internal electric fields for erase and

programming operations produces reliable cycling.

The MX29F080 uses a 5.0V±10% VCC supply to

perform the High Reliability Erase and auto

Program/Erase algorithms.

The standard MX29F080 offers access time as fast as

70ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29F080 has separate chip enable (CE) and output

enable (OE ) controls.

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to 100

milliamps on address and data pin from -1V to VCC

+ 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F080 uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

P/N:PM0579

REV. 1.4, JAN, 16, 2002

12 3 4 5 6 7...38

中文翻译

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与MX29F080TC-70相关器件

型号	品牌	获取价格	描述	数据表
MX29F080TC-90	Macronix	获取价格	8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F100BMC-12	ETC	获取价格	x8/x16 Flash EEPROM
MX29F100BMC-55	ETC	获取价格	x8/x16 Flash EEPROM
MX29F100BMC-70	ETC	获取价格	x8/x16 Flash EEPROM
MX29F100BMC-90	ETC	获取价格	x8/x16 Flash EEPROM
MX29F100BTC-12	ETC	获取价格	x8/x16 Flash EEPROM
MX29F100BTC-55	ETC	获取价格	x8/x16 Flash EEPROM
MX29F100BTC-70	ETC	获取价格	x8/x16 Flash EEPROM
MX29F100BTC-90	ETC	获取价格	x8/x16 Flash EEPROM
MX29F100T	Macronix	获取价格	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

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