Datasheet > 存储 > 闪存> MX29F100TMC-55

MX29F100TMC-55

更新时间： 2024-11-02 22:51:27

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
47页	705K
描述
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MX29F100TMC-55 数据手册

MX29F100T/B

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

FEATURES

- Hardware method to disable any combination of

sectors from program or erase operations

- Sector protect/unprotect for 5V only system or 5V/

12V system

• 5V±10% for read, erase and write operation

• 131072x8/ 65536x16 switchable

• Fast access time:55/70/90/120ns

• Low power consumption

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1 to VCC+1V

• Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

- 40mA maximum active current(5MHz)

- 1uA typical standby current

• Command register architecture

- Byte/ Word Programming (7us/ 12us typical)

- Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and

64K-Byte x1)

• Auto Erase (chip) and Auto Program

- Automatically erase any combination of sectors or

with Erase Suspend capability.

- 44-pin SOP

- 48-pin TSOP

• Ready/Busy pin(RY/BY)

- Automatically program and verify data at specified

address

• Status Reply

- Provides a hardware method or detecting program

or erase cycle completion

• Erase suspend/ Erase Resume

- Suspend an erase operation to read data from, or

program data to a sector that is not being erased,

then resume the erase operation.

• Hardware RESET pin

- Data polling & Toggle bit for detection of program

and erase cycle completion.

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

- Hardware method of resetting the device to reading

the device to reading array data.

• 20 years data retention

- Superior inadvertent write protection

• Sector protection

GENERAL DESCRIPTION

The MX29F100T/B is a 1-mega bit Flash memory

organized as 131,072 bytes or 65,536 words.

MXIC's Flash memories offer the most cost-effective

and reliable read/write non-volatile random access

memory. The MX29F100T/B is packaged in 44-pin

SOP and 48-pin TSOP. It is designed to be repro-

grammed and erased in-system or in-standard

EPROM programmers.

fixed power supply levels during erase and

programming, while maintaining maximum EPROM

compatibility.

MXIC Flash technology reliably stores memory con-

tents even after 100,000 erase and program cycles.

The MXIC cell is designed to optimize the erase and

programming mechanisms. In addition, the combi-

nation of advanced tunnel oxide processing and low

internal electric fields for erase and programming

operations produces reliable cycling. The

MX29F100T/B uses a 5.0V±10% VCC supply to

perform the High Reliability Erase and auto

Program/Erase algorithms.

The standard MX29F100T/B offers access time as

fast as 55ns, allowing operation of high-speed micro-

processors without wait states. To eliminate bus

contention, the MX29F100T/B has separate chip

enable (CE) and output enable (OE) controls.

MXIC's Flash memories augment EPROM function-

ality with in-circuit electrical erasure and

programming. The MX29F100T/B uses a command

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to 100

milliamps on address and data pin from -1V to VCC

+ 1V.

P/N:PM0548

REV. 1.2, NOV. 12, 2001

12 3 4 5 6 7...47

中文翻译

下载PDF

与MX29F100TMC-55相关器件

型号	品牌	获取价格	描述	数据表
MX29F100TMC-70	Macronix	获取价格	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TMC-90	Macronix	获取价格	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TTA-12	Macronix	获取价格	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TTA-90	Macronix	获取价格	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TTC-12	Macronix	获取价格	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TTC-55	Macronix	获取价格	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TTC-70	Macronix	获取价格	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F100TTC-90	Macronix	获取价格	1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F1610	Macronix	获取价格	16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F1610A	Macronix	获取价格	16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

与MX29F100TMC-55相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

12
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

6
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

30
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

29

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29F100TMC-55

MX29F100TMC-55 数据手册

与MX29F100TMC-55相关器件

与MX29F100TMC-55相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29F100TMC-55

MX29F100TMC-55 数据手册

与MX29F100TMC-55相关器件

与MX29F100TMC-55相关文章

您还可以找

您在本页遇到什么问题？