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MX29F080TC-90

更新时间： 2024-11-02 22:54:35
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
38页 607K
描述
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY

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中文翻译

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MX29F080TC-90 数据手册

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PRELIMINARY  
MX29F080  
8M-BIT[1024Kx8]CMOSEQUALSECTORFLASHMEMORY  
FEATURES  
•
•
1,048,576 x 8 byte mode only stuction  
Single power supply operation  
- 5.0V only operation for read, erase and program  
operation  
Fast access time: 70/90/120ns  
Low power consumption  
- 30mA maximum active current  
- 0.2uA typical standby current  
and erase operation completion.  
Ready/Busy (RY/BY)  
- Provides a hardware methed of detecting program  
and erase operation complation.  
Sector Group protect/chip unprotect for 5V/12V sys-  
tem.  
Sector Group protection  
- Hardware protect method for each group which con-  
sists of two adjacent sectors  
- Temporary sector group unprotect allows code  
changes in previously locked sectors  
10,000 minimum erase/program cycles  
Latch-up protected to 100mA from -1V toVCC+1V  
Low VCC write inhibit is equal to or less than 3.2V  
Package type:  
•
•
•
•
•
•
•
Command register architecture  
- Byte Programming (7us typical)  
- Sector Erase of 16 equal sector with 64K-Byte each  
Auto Erase (chip & sector) and Auto Program  
- Automatically erase any combination of sectors with  
Erase Suspend capability.  
- Automatically program and verify data at specified  
address  
Erase suspend/Erase Resume  
- Suspends sector erase operation to read data from,  
or program data to, another sector that is not being  
erased, then resumes the erase.  
Status Reply  
•
•
•
•
- 40-pinTSOP or 44-pin SOP  
•
•
•
Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
- Data polling & Toggle bit for detection of program  
GENERAL DESCRIPTION  
during erase and programming, while maintaining maxi-  
mum EPROM compatibility.  
The MX29F080 is a 8-mega bit Flash memory organized  
as 1024K bytes of 8 bits. MXIC's Flash memories offer  
the most cost-effective and reliable read/write non-vola-  
tile random access memory. The MX29F080 is pack-  
aged in 40-pinTSOP or 44-pin SOP. It is designed to be  
reprogrammed and erased in system or in standard  
EPROM programmers.  
MXIC Flash technology reliably stores memory  
contents even after 10,000 erase and program  
cycles. The MXIC cell is designed to optimize the  
erase and program mechanisms. In addition, the  
combination of advanced tunnel oxide processing  
and low internal electric fields for erase and  
programming operations produces reliable cycling.  
The MX29F080 uses a 5.0V±10% VCC supply to  
perform the High Reliability Erase and auto  
Program/Erase algorithms.  
The standard MX29F080 offers access time as fast as  
70ns, allowing operation of high-speed microprocessors  
without wait states. To eliminate bus contention, the  
MX29F080 has separate chip enable (CE) and output  
enable (OE ) controls.  
The highest degree of latch-up protection is  
achieved with MXIC's proprietary non-epi process.  
Latch-up protection is proved for stresses up to 100  
milliamps on address and data pin from -1V to VCC  
+ 1V.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F080 uses a command register to manage this  
functionality. The command register allows for 100%  
TTL level control inputs and fixed power supply levels  
P/N:PM0579  
REV. 1.4, JAN, 16, 2002  
1
1234567...38

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