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MX29F1610A-10 PDF预览

MX29F1610A-10

更新时间: 2024-11-02 22:36:47
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
39页 669K
描述
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

MX29F1610A-10 数据手册

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PRELIMINARY  
MX29F1610A  
16M-BIT [2M x8/1M x16] CMOS  
SINGLE VOLTAGE FLASH EEPROM  
FEATURES  
Pageprogramoperation  
5V ±10% write and erase  
- Internal address and data latches for  
128 bytes/64 words per page  
- Page programming time: 0.9ms typical  
- Byte programming time: 7us in average  
JEDEC-standard EEPROM commands  
Endurance:100,000 cycles  
Fast access time: 90/100/120ns  
Sector erase architecture  
Low power dissipation  
- 30mA typical active current  
- 1uA typical standby current  
- 16 equal sectors of 128k bytes each  
- Sector erase time: 1.3 s typical  
Auto Erase and Auto Program Algorithms  
- Automatically erases any one of the sectors  
or the whole chip with Erase Suspend capability  
- Automatically programs and verifies data at  
specified addresses  
Status Register feature for detection of  
program or erase cycle completion  
CMOS and TTL compatible inputs and outputs  
Sector Protection  
- Hardware method that can protect any combination  
of sectors from write or erase operations.  
Deep Power-Down Input  
- 1uA ICC typical  
Industry standard surface mount packaging  
- 48 lead TSOP, TYPE I  
Low VCC write inhibit is equal to or less than 3.2V  
Software and hardware data protection  
- 44 lead SOP  
GENERAL DESCRIPTION  
The MX29F1610A is a 16-mega bit Flash memory  
organized as either 1M wordx16 or 2M bytex8. The  
MX29F1610A includes 16-128KB(131,072) blocks or 16-  
64KW(65,536) blocks. MXIC's Flash memories offer the  
most cost-effective and reliable read/write non-volatile  
random access memory. The MX29F1610A is packaged  
in48-pinTSOPor44-pinSOP. For48-pinTSOP,CE2and  
RY/BYareextrapinscomparedwith44-pinSOPpackage.  
This is to optimize the products (such as solid-state disk  
drives or flash memory cards) control pin budget. All the  
above three pins(CE2,RY/BY and PWD) plus one extra  
VCC pin are not provided in 44-pin SOP. It is designed to  
be reprogrammed and erased in-system or in-standard  
EPROMprogrammers.  
functionality. Thecommandregisterallowsfor100%TTL  
level control inputs and fixed power supply levels during  
erase and programming, while maintaining maximum  
EPROM compatibility.  
To allow for simple in-system reprogrammability, the  
MX29F1610A does not require high input voltages for  
programming. Five-volt-only commands determine the  
operation of the device. Reading data out of the device  
is similar to reading from an EPROM.  
MXIC Flash technology reliably stores memory contents  
even after 100,000 cycles. The MXIC's cell is designed  
to optimize the erase and programming mechanisms. In  
addition, the combination of advanced tunnel oxide  
processing and low internal electric fields for erase and  
programming operations produces reliable cycling. The  
MX29F1610Ausesa5V±10%VCCsupplytoperformthe  
Auto Erase and Auto Program algorithms.  
ThestandardMX29F1610Aoffersaccesstimesasfastas  
90ns,allowing operation of high-speed microprocessors  
without wait. To eliminate bus contention, the  
MX29F1610A has separate chip enables(CE1 and CE2),  
output enable (OE), and write enable (WE) controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up  
protection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC +1V.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F1610A uses a command register to manage this  
REV.1.7,JUN. 15, 2001  
P/N: PM0506  
1

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