PRELIMINARY
MX29F1610A/B
16M-BIT [2M x8/1M x16] CMOS
SINGLE VOLTAGE FLASH EEPROM
FEATURES
• Pageprogramoperation
• 5V ±10% write and erase
- Internal address and data latches for
128 bytes/64 words per page
- Page programming time: 0.9ms typical
- Byte programming time: 7us in average
• JEDEC-standard EEPROM commands
• Endurance:100,000 cycles
• Fast access time: 90/100/120ns
• Sector erase architecture
• Low power dissipation
- 30mA typical active current
- 1uA typical standby current
- 16 equal sectors of 128k bytes each
- Sector erase time: 1.3 s typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors
or the whole chip with Erase Suspend capability
- Automatically programs and verifies data at
specified addresses
• Status Register feature for detection of
program or erase cycle completion
• CMOS and TTL compatible inputs and outputs
• Sector Protection
- Hardware method that can protect any combination
of sectors from write or erase operations.
• Deep Power-Down Input
- 1uA ICC typical
• Industry standard surface mount packaging
- 48 lead TSOP, TYPE I
• Low VCC write inhibit is equal to or less than 3.2V
• Software and hardware data protection
- 44 lead SOP
GENERAL DESCRIPTION
The MX29F1610A/B is a 16-mega bit Flash memory
organized as either 1M wordx16 or 2M bytex8. The
MX29F1610A/B includes 16-128KB(131,072) blocks or
16-64KW(65,536) blocks. MXIC's Flash memories offer
the most cost-effective and reliable read/write non-
volatile random access memory. The MX29F1610A/B is
packaged in 48-pin TSOP or 44-pin SOP. For 48-pin
TSOP, CE2 and RY/BY are extra pins compared with 44-
pin SOP package. This is to optimize the products (such
as solid-state disk drives or flash memory cards) control
pin budget. All the above three pins(CE2,RY/BY and
PWD) plus one extra VCC pin are not provided in 44-pin
SOP. It is designed to be reprogrammed and erased in-
system or in-standard EPROM programmers.
functionality. Thecommandregisterallowsfor100%TTL
level control inputs and fixed power supply levels during
erase and programming, while maintaining maximum
EPROM compatibility.
To allow for simple in-system reprogrammability, the
MX29F1610A/B does not require high input voltages for
programming. Five-volt-only commands determine the
operation of the device. Reading data out of the device
is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 100,000 cycles. The MXIC's cell is designed
to optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29F1610A/B uses a 5V ±10% VCC supply to perform
the Auto Erase and Auto Program algorithms.
ThestandardMX29F1610A/Boffersaccesstimesasfast
as90ns,allowingoperationofhigh-speedmicroprocessors
without wait. To eliminate bus contention, the
MX29F1610A/B has separate chip enables(CE1 and
CE2), outputenable(OE),andwriteenable(WE)controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F1610A/Busesacommandregistertomanagethis
REV.1.5, JUN. 20, 2000
P/N: PM0506
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