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MX29F1610BRC-90 PDF预览

MX29F1610BRC-90

更新时间: 2024-11-24 06:02:35
品牌 Logo 应用领域
旺宏电子 - Macronix 光电二极管内存集成电路
页数 文件大小 规格书
39页 249K
描述
Flash, 1MX16, 90ns, PDSO48, 12 X 20 MM, REVERSE, TSOP1-48

MX29F1610BRC-90 数据手册

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PRELIMINARY  
MX29F1610A/B  
16M-BIT [2M x8/1M x16] CMOS  
SINGLE VOLTAGE FLASH EEPROM  
FEATURES  
Pageprogramoperation  
5V ±10% write and erase  
- Internal address and data latches for  
128 bytes/64 words per page  
- Page programming time: 0.9ms typical  
- Byte programming time: 7us in average  
JEDEC-standard EEPROM commands  
Endurance:100,000 cycles  
Fast access time: 90/100/120ns  
Sector erase architecture  
Low power dissipation  
- 30mA typical active current  
- 1uA typical standby current  
- 16 equal sectors of 128k bytes each  
- Sector erase time: 1.3 s typical  
Auto Erase and Auto Program Algorithms  
- Automatically erases any one of the sectors  
or the whole chip with Erase Suspend capability  
- Automatically programs and verifies data at  
specified addresses  
Status Register feature for detection of  
program or erase cycle completion  
CMOS and TTL compatible inputs and outputs  
Sector Protection  
- Hardware method that can protect any combination  
of sectors from write or erase operations.  
Deep Power-Down Input  
- 1uA ICC typical  
Industry standard surface mount packaging  
- 48 lead TSOP, TYPE I  
Low VCC write inhibit is equal to or less than 3.2V  
Software and hardware data protection  
- 44 lead SOP  
GENERAL DESCRIPTION  
The MX29F1610A/B is a 16-mega bit Flash memory  
organized as either 1M wordx16 or 2M bytex8. The  
MX29F1610A/B includes 16-128KB(131,072) blocks or  
16-64KW(65,536) blocks. MXIC's Flash memories offer  
the most cost-effective and reliable read/write non-  
volatile random access memory. The MX29F1610A/B is  
packaged in 48-pin TSOP or 44-pin SOP. For 48-pin  
TSOP, CE2 and RY/BY are extra pins compared with 44-  
pin SOP package. This is to optimize the products (such  
as solid-state disk drives or flash memory cards) control  
pin budget. All the above three pins(CE2,RY/BY and  
PWD) plus one extra VCC pin are not provided in 44-pin  
SOP. It is designed to be reprogrammed and erased in-  
system or in-standard EPROM programmers.  
functionality. Thecommandregisterallowsfor100%TTL  
level control inputs and fixed power supply levels during  
erase and programming, while maintaining maximum  
EPROM compatibility.  
To allow for simple in-system reprogrammability, the  
MX29F1610A/B does not require high input voltages for  
programming. Five-volt-only commands determine the  
operation of the device. Reading data out of the device  
is similar to reading from an EPROM.  
MXIC Flash technology reliably stores memory contents  
even after 100,000 cycles. The MXIC's cell is designed  
to optimize the erase and programming mechanisms. In  
addition, the combination of advanced tunnel oxide  
processing and low internal electric fields for erase and  
programming operations produces reliable cycling. The  
MX29F1610A/B uses a 5V ±10% VCC supply to perform  
the Auto Erase and Auto Program algorithms.  
ThestandardMX29F1610A/Boffersaccesstimesasfast  
as90ns,allowingoperationofhigh-speedmicroprocessors  
without wait. To eliminate bus contention, the  
MX29F1610A/B has separate chip enables(CE1 and  
CE2), outputenable(OE),andwriteenable(WE)controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up  
protection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC +1V.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F1610A/Busesacommandregistertomanagethis  
REV.1.5, JUN. 20, 2000  
P/N: PM0506  
1

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