Datasheet > MX29F1610ATC-12

MX29F1610ATC-12

更新时间： 2024-11-26 14:54:03

品牌	Logo	应用领域
旺宏电子 - Macronix		光电二极管内存集成电路
页数	文件大小	规格书
39页	669K
描述
Flash, 1MX16, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MX29F1610ATC-12 数据手册

PRELIMINARY

MX29F1610A

16M-BIT [2M x8/1M x16] CMOS

SINGLE VOLTAGE FLASH EEPROM

FEATURES

• Pageprogramoperation

• 5V ±10% write and erase

- Internal address and data latches for

128 bytes/64 words per page

- Page programming time: 0.9ms typical

- Byte programming time: 7us in average

• JEDEC-standard EEPROM commands

• Endurance:100,000 cycles

• Fast access time: 90/100/120ns

• Sector erase architecture

• Low power dissipation

- 30mA typical active current

- 1uA typical standby current

- 16 equal sectors of 128k bytes each

- Sector erase time: 1.3 s typical

• Auto Erase and Auto Program Algorithms

- Automatically erases any one of the sectors

or the whole chip with Erase Suspend capability

- Automatically programs and verifies data at

specified addresses

• Status Register feature for detection of

program or erase cycle completion

• CMOS and TTL compatible inputs and outputs

• Sector Protection

- Hardware method that can protect any combination

of sectors from write or erase operations.

• Deep Power-Down Input

- 1uA ICC typical

• Industry standard surface mount packaging

- 48 lead TSOP, TYPE I

• Low VCC write inhibit is equal to or less than 3.2V

• Software and hardware data protection

- 44 lead SOP

GENERAL DESCRIPTION

The MX29F1610A is a 16-mega bit Flash memory

organized as either 1M wordx16 or 2M bytex8. The

MX29F1610A includes 16-128KB(131,072) blocks or 16-

64KW(65,536) blocks. MXIC's Flash memories offer the

most cost-effective and reliable read/write non-volatile

random access memory. The MX29F1610A is packaged

in48-pinTSOPor44-pinSOP. For48-pinTSOP,CE2and

RY/BYareextrapinscomparedwith44-pinSOPpackage.

This is to optimize the products (such as solid-state disk

drives or flash memory cards) control pin budget. All the

above three pins(CE2,RY/BY and PWD) plus one extra

VCC pin are not provided in 44-pin SOP. It is designed to

be reprogrammed and erased in-system or in-standard

EPROMprogrammers.

functionality. Thecommandregisterallowsfor100%TTL

level control inputs and fixed power supply levels during

erase and programming, while maintaining maximum

EPROM compatibility.

To allow for simple in-system reprogrammability, the

MX29F1610A does not require high input voltages for

programming. Five-volt-only commands determine the

operation of the device. Reading data out of the device

is similar to reading from an EPROM.

MXIC Flash technology reliably stores memory contents

even after 100,000 cycles. The MXIC's cell is designed

to optimize the erase and programming mechanisms. In

addition, the combination of advanced tunnel oxide

processing and low internal electric fields for erase and

programming operations produces reliable cycling. The

MX29F1610Ausesa5V±10%VCCsupplytoperformthe

Auto Erase and Auto Program algorithms.

ThestandardMX29F1610Aoffersaccesstimesasfastas

90ns,allowing operation of high-speed microprocessors

without wait. To eliminate bus contention, the

MX29F1610A has separate chip enables(CE1 and CE2),

output enable (OE), and write enable (WE) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up

protection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC +1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F1610A uses a command register to manage this

REV.1.7,JUN. 15, 2001

P/N: PM0506

12 3 4 5 6 7...39

中文翻译

下载PDF

与MX29F1610ATC-12相关器件

型号	品牌	获取价格	描述	数据表
MX29F1610BMC-90	Macronix	获取价格	Flash, 1MX16, 90ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44
MX29F1610BRC-10	Macronix	获取价格	Flash, 1MX16, 100ns, PDSO48
MX29F1610BRC-12	Macronix	获取价格	Flash, 1MX16, 120ns, PDSO48
MX29F1610BRC-70	Macronix	获取价格	Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, REVERSE, TSOP1-48
MX29F1610BRC-90	Macronix	获取价格	Flash, 1MX16, 90ns, PDSO48, 12 X 20 MM, REVERSE, TSOP1-48
MX29F1610BTC-10	Macronix	获取价格	Flash, 1MX16, 100ns, PDSO48
MX29F1610BTC-12	Macronix	获取价格	Flash, 1MX16, 120ns, PDSO48
MX29F1610BTC-70	Macronix	获取价格	Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, TSOP1-48
MX29F1610BTC-90	Macronix	获取价格	Flash, 1MX16, 90ns, PDSO48, 12 X 20 MM, TSOP1-48
MX29F1610MC-10	Macronix	获取价格	Flash, 1MX16, 100ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44

与MX29F1610ATC-12相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29F1610ATC-12

MX29F1610ATC-12 数据手册

与MX29F1610ATC-12相关器件

与MX29F1610ATC-12相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29F1610ATC-12

MX29F1610ATC-12 数据手册

与MX29F1610ATC-12相关器件

与MX29F1610ATC-12相关文章

您还可以找

您在本页遇到什么问题？