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MX29F100TTC-90 PDF预览

MX29F100TTC-90

更新时间: 2024-11-02 22:54:35
品牌 Logo 应用领域
旺宏电子 - Macronix /
页数 文件大小 规格书
47页 705K
描述
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

MX29F100TTC-90 数据手册

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MX29F100T/B  
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY  
FEATURES  
- Hardware method to disable any combination of  
sectors from program or erase operations  
- Sector protect/unprotect for 5V only system or 5V/  
12V system  
• 5V±10% for read, erase and write operation  
• 131072x8/ 65536x16 switchable  
• Fast access time:55/70/90/120ns  
• Low power consumption  
• 100,000 minimum erase/program cycles  
• Latch-up protected to 100mA from -1 to VCC+1V  
• Boot Code Sector Architecture  
- T = Top Boot Sector  
- B = Bottom Boot Sector  
• Low VCC write inhibit is equal to or less than 3.2V  
• Package type:  
- 40mA maximum active current(5MHz)  
- 1uA typical standby current  
• Command register architecture  
- Byte/ Word Programming (7us/ 12us typical)  
- Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and  
64K-Byte x1)  
• Auto Erase (chip) and Auto Program  
- Automatically erase any combination of sectors or  
with Erase Suspend capability.  
- 44-pin SOP  
- 48-pin TSOP  
• Ready/Busy pin(RY/BY)  
- Automatically program and verify data at specified  
address  
• Status Reply  
- Provides a hardware method or detecting program  
or erase cycle completion  
• Erase suspend/ Erase Resume  
- Suspend an erase operation to read data from, or  
program data to a sector that is not being erased,  
then resume the erase operation.  
• Hardware RESET pin  
- Data polling & Toggle bit for detection of program  
and erase cycle completion.  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
- Hardware method of resetting the device to reading  
the device to reading array data.  
• 20 years data retention  
- Superior inadvertent write protection  
• Sector protection  
GENERAL DESCRIPTION  
The MX29F100T/B is a 1-mega bit Flash memory  
organized as 131,072 bytes or 65,536 words.  
MXIC's Flash memories offer the most cost-effective  
and reliable read/write non-volatile random access  
memory. The MX29F100T/B is packaged in 44-pin  
SOP and 48-pin TSOP. It is designed to be repro-  
grammed and erased in-system or in-standard  
EPROM programmers.  
fixed power supply levels during erase and  
programming, while maintaining maximum EPROM  
compatibility.  
MXIC Flash technology reliably stores memory con-  
tents even after 100,000 erase and program cycles.  
The MXIC cell is designed to optimize the erase and  
programming mechanisms. In addition, the combi-  
nation of advanced tunnel oxide processing and low  
internal electric fields for erase and programming  
operations produces reliable cycling. The  
MX29F100T/B uses a 5.0V±10% VCC supply to  
perform the High Reliability Erase and auto  
Program/Erase algorithms.  
The standard MX29F100T/B offers access time as  
fast as 55ns, allowing operation of high-speed micro-  
processors without wait states. To eliminate bus  
contention, the MX29F100T/B has separate chip  
enable (CE) and output enable (OE) controls.  
MXIC's Flash memories augment EPROM function-  
ality with in-circuit electrical erasure and  
programming. The MX29F100T/B uses a command  
register to manage this functionality. The command  
register allows for 100% TTL level control inputs and  
The highest degree of latch-up protection is  
achieved with MXIC's proprietary non-epi process.  
Latch-up protection is proved for stresses up to 100  
milliamps on address and data pin from -1V to VCC  
+ 1V.  
P/N:PM0548  
REV. 1.2, NOV. 12, 2001  
1

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