Datasheet > MX29F004T

MX29F004T

更新时间： 2024-11-02 22:54:35

品牌	Logo	应用领域
旺宏电子 - Macronix		/
页数	文件大小	规格书
39页	869K
描述
4M-BIT [512KX8] CMOS FLASH MEMORY

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MX29F004T 数据手册

MX29F004T/B

4M-BIT [512KX8] CMOS FLASH MEMORY

FEATURES

• 524,288 x 8 only

- Suspends an erase operation to read data from,

or program data to, another sector that is not being

erased, then resumes the erase.

• Status Reply

• Single power supply operation

- 5.0V only operation for read, erase and program

operation

• Fast access time: 70/90/120ns

• Low power consumption

- Data polling & Toggle bit for detection of program

and erase cycle completion.

- 30mA maximum active current(5MHz)

- 1uA typical standby current

• Chip protect/unprotect for 5V only system or 5V/

12V system.

• Command register architecture

- Byte Programming (7us typical)

- Sector Erase

(Sector structure:16KB/8KB/8KB/32KB and 64KBx7)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors

with Erase Suspend capability.

- Automatically program and verify data at specified

address

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

- 32-pin PLCC, TSOP or PDIP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• 20 years data retention

• Erasesuspend/EraseResume

GENERAL DESCRIPTION

The MX29F004T/B is a 4-mega bit Flash memory

organized as 512K bytes of 8 bits. MXIC's Flash

memoriesofferthemostcost-effectiveandreliableread/

write non-volatile random access memory. The

MX29F004T/B is packaged in 32-pin PLCC, TSOP,

PDIP. It is designed to be reprogrammed and erased in

system or in standard EPROM programmers.

during erase and programming, while maintaining

maximum EPROM compatibility.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and programming mechanisms. In addition,

the combination of advanced tunnel oxide

processing and low internal electric fields for erase

and program operations produces reliable cycling.

The MX29F004T/B uses a 5.0V±10% VCC supply

to perform the High Reliability Erase and auto

Program/Erase algorithms.

The standard MX29F004T/B offers access time as fast

as 70ns, allowing operation of high-speed

microprocessors without wait states. To eliminate bus

contention,theMX29F004T/Bhasseparatechipenable

(CE) and output enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F004T/Busesacommandregistertomanagethis

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to

100 milliamps on address and data pin from -1V to

VCC + 1V.

P/N:PM0554

REV. 1.4, JUN. 12, 2001

12 3 4 5 6 7...39

中文翻译

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与MX29F004T相关器件

型号	品牌	获取价格	描述	数据表
MX29F004TPC-12	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TPC-55	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TPC-70	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TPC-90	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TPI-12	ETC	获取价格	EEPROM
MX29F004TPI-55	ETC	获取价格	EEPROM
MX29F004TPI-70	ETC	获取价格	EEPROM
MX29F004TPI-90	ETC	获取价格	EEPROM
MX29F004TQC-12	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TQC-12G	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY

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