Datasheet > MX29F004TRC-90

MX29F004TRC-90

更新时间： 2024-11-04 08:36:03

品牌	Logo	应用领域
旺宏电子 - Macronix		光电二极管
页数	文件大小	规格书
33页	226K
描述
Flash, 512KX8, 90ns, PDSO32, 12 X 20 MM, PLASTIC, REVERSE, TSOP-32

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MX29F004TRC-90 数据手册

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ADVANCED INFORMATION

MX29F004T/B

4M-BIT [512KX8] CMOS FLASH MEMORY

FEATURES

• 524,288 x 8 only

• Erase suspend/Erase Resume

- Suspends an erase operation to read data from,

or program data to, another sector that is not being

erased, then resumes the erase.

• Status Reply

- Data polling & Toggle bit for detection of program

and erase cycle completion.

• Chip protect/unprotect for 5V only system or 5V/

12V system.

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Low VCC write inhibit≤3.2V

• Package type:

- 32-pin PLCC, TSOP or PDIP

• Single power supply operation

- 5.0V only operation for read, erase and program

operation

• Fast access time: 70/90/120ns

• Low power consumption

- 30mA maximum active current

- 1uA typical standby current

• Command register architecture

- Byte Programming (7us typical)

- Block Erase

(Block structure:16KB/8KB/8KB/32KB and 64KBx7)

• Auto Erase (chip & block) and Auto Program

- Automatically erase any combination of sectors

with Erase Suspend capability.

- Automatically program and verify data at specified

address

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

GENERAL DESCRIPTION

The MX29F004T/B is a 4-mega bit Flash memory

organized as 512K bytes of 8 bits. MXIC's Flash

memoriesofferthemostcost-effectiveandreliableread/

write non-volatile random access memory. The

MX29F004T/B is packaged in 32-pin PLCC, TSOP,

PDIP. Itisdesignedtobereprogrammedanderasedin-

system or in-standard EPROM programmers.

during erase and programming, while maintaining

maximum EPROM compatibility.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and programming mechanisms. In addition,

the combination of advanced tunnel oxide

processing and low internal electric fields for erase

and programming operations produces reliable

cycling. The MX29F004T/B uses a 5.0V±10% VCC

supply to perform the High Reliability Erase and

auto Program/Erase algorithms.

ThestandardMX29F004T/Boffersaccesstimesasfast

as 70ns, allowing operation of high-speed

microprocessors without wait states. To eliminate bus

contention,theMX29F004T/Bhasseparatechipenable

(CE) and output enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F004T/Busesacommandregistertomanagethis

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to

100 milliamps on address and data pin from -1V to

VCC + 1V.

P/N:PM0554

REV. 0.4, AUG. 01, 1998

12 3 4 5 6 7...33

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与MX29F004TRC-90相关器件

型号	品牌	获取价格	描述	数据表
MX29F004TTC-12	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TTC-12G	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TTC-55	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TTC-55G	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TTC-70	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TTC-70G	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TTC-90	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TTC-90G	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TTI-12	ETC	获取价格	EEPROM
MX29F004TTI-55	ETC	获取价格	EEPROM

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