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MX29F016TC-90 PDF预览

MX29F016TC-90

更新时间: 2024-11-02 22:21:19
品牌 Logo 应用领域
旺宏电子 - Macronix /
页数 文件大小 规格书
37页 848K
描述
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY

MX29F016TC-90 数据手册

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MX29F016  
16M-BIT[2MX8]CMOSEQUALSECTORFLASHMEMORY  
FEATURES  
• Single power supply 5V operation for read, erase and  
program  
• Fast access time: 90/120ns  
• Status Reply  
- Data polling & Toggle bit for detection of program  
and erase cycle completion.  
• Low power consumption  
- 30mA maximum active current  
• Group Sector protect/unprotect for 5V/12V system.  
• Group Sector protection  
- 0.2uA typical standby current  
- Hardware sector protect/unprotect method for each  
group which consists of two adjacent sectors  
- Temporary group sector unprotect allows code  
changes in previously locked sectors  
• 100,000minimumerase/programcycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Low VCC write inhibit is equal to or less than 3.2V  
• Package type:  
- 40-pin TSOP, 44-pin SOP, 48-pin TSOP  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
• Command register architecture  
- Byte Programming (7us typical)  
- Sector Erase:32 equal sector with of 64KByte each  
• Auto Erase (chip & sector) and Auto Program  
- Automatically erase any combination of sectors  
with Erase Suspend capability.  
- Automatically program and verify data at specified  
address  
• Erase suspend/Erase Resume  
- Suspends an erase operation to read data from,  
or program data to, another sector that is not being  
erased, then resumes the erase.  
GENERAL DESCRIPTION  
TheMX29F016isa16-megabitFlashmemoryorganized  
as 2M bytes of 8 bits. MXIC's Flash memories offer the  
most cost-effective and reliable read/write non-volatile  
randomaccessmemory. TheMX29F016ispackagedin  
40-pinTSOPor44-pinSOP,48-pinTSOP. Itisdesigned  
tobereprogrammedanderasedinsystemorinstandard  
EPROM programmers.  
during erase and programming, while maintaining  
maximum EPROM compatibility.  
MXIC Flash technology reliably stores memory  
contents even after 100,000 erase and program  
cycles. The MXIC cell is designed to optimize the  
erase and program mechanisms. In addition, the  
combination of advanced tunnel oxide processing  
and low internal electric fields for erase and  
programming operations produces reliable cycling.  
The MX29F016 uses a 5.0V±10% VCC supply to  
perform the High Reliability Erase and auto  
Program/Erase algorithms.  
The standard MX29F016 offers access time as fast as  
90ns,allowingoperationofhigh-speedmicroprocessors  
without wait states. To eliminate bus contention, the  
MX29F016 has separate chip enable (CE) and output  
enable (OE ) controls.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F016 uses a command register to manage this  
functionality. The command register allows for 100%  
TTL level control inputs and fixed power supply levels  
The highest degree of latch-up protection is  
achieved with MXIC's proprietary non-epi process.  
Latch-up protection is proved for stresses up to  
100 milliamps on address and data pin from -1V to  
VCC + 1V.  
P/N:PM0590  
REV. 1.3, JUN. 13, 2001  
1

MX29F016TC-90 替代型号

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