Datasheet > MX29F022NT

MX29F022NT

更新时间： 2024-11-03 04:58:07

品牌	Logo	应用领域
旺宏电子 - Macronix		/
页数	文件大小	规格书
46页	596K
描述
2M-BIT[256K x 8]CMOS FLASH MEMORY

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数据手册

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MX29F022NT 数据手册

MX29F022/022NT/B

2M-BIT[256K x 8]CMOS FLASH MEMORY

FEATURES

• 262,144x 8 only

• Fast access time: 55/70/90/120ns

• Low power consumption

• Status Reply

- Data polling & Toggle bit for detection of program

and erase cycle completion.

- 30mA maximum active current

- 1uA typical standby current@5MHz

• Programming and erasing voltage 5V±10%

• Command register architecture

- Byte Programming (7us typical)

• Chip protect/unprotect for 5V only system or 5V/12V

system

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1 to VCC+1V

• Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Hardware RESET pin

- Resets internal state machine to read mode

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

- Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte

x1, and 64K-Byte x 3)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors or

the whole chip with Erase Suspend capability.

- Automatically programs and verifies data at speci-

fied address

- 32-pin PDIP

• Erase Suspend/Erase Resume

- 32-pin PLCC

- Suspends an erase operation to read data from, or

program data to, a sector that is not being erased,

then resumes the erase operation.

- 32-pin TSOP (Type 1)

• 20 years data retention

GENERAL DESCRIPTION

The MX29F022T/B is a 2-mega bit Flash memory

organized as 256K bytes of 8 bits only. MXIC's Flash

memories offer the most cost-effective and reliable read/

write non-volatile random access memory. The

MX29F022T/B is packaged in 32-pin PDIP, PLCC and

32-pinTSOP(I). It is designed to be reprogrammed and

erased in-system or in-standard EPROM programmers.

MXIC's Flash technology reliably stores memory

contents even after 100,000 erase and program cycles.

The MXIC cell is designed to optimize the erase and

programming mechanisms. In addition, the combina-

tion of advanced tunnel oxide processing and low

internal electric fields for erase and programming

operations produces reliable cycling. The MX29F022T/

B uses a 5.0V ± 10% VCC supply to perform the High

Reliability Erase and auto Program/Erase algorithms.

The standard MX29F022T/B offers access time as fast

as 55ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29F022T/B has separate chip enable (CE) and

output enable (OE) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up

protection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F022T/B uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining

maximum EPROM compatibility.

P/N:PM0556

REV. 1.3, NOV. 11, 2002

12 3 4 5 6 7...46

中文翻译

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与MX29F022NT相关器件

型号	品牌	获取价格	描述	数据表
MX29F022NTPC-12	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTPC-55	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTPC-70	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTPC-90	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTQC-12	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTQC-55	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTQC-70	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTQC-90	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTTC-12	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTTC-55	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY

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