Datasheet > MX29F022NTTC-12

MX29F022NTTC-12

更新时间： 2024-11-02 22:28:43

品牌	Logo	应用领域
旺宏电子 - Macronix		/
页数	文件大小	规格书
46页	890K
描述
2M-BIT[256K x 8]CMOS FLASH MEMORY

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MX29F022NTTC-12 数据手册

MX29F022/022N

2M-BIT[256K x 8]CMOS FLASH MEMORY

FEATURES

• 262,144x 8 only

• Status Reply

• Fast access time: 55/70/90/120ns

• Low power consumption

-Data polling &Toggle bit for detection of program and

erase cycle completion.

• Chip protect/unprotect for 5V only system or 5V/12V

system

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1 to VCC+1V

• Boot Code Sector Architecture

-T = Top Boot Sector

-30mA maximum active current

-1uA typical standby current@5MHz

• Programming and erasing voltage 5V±10%

• Command register architecture

-Byte Programming (7us typical)

-Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte

x1, and 64K-Byte x 3)

-B = Bottom Boot Sector

• Hardware RESET pin

• Auto Erase (chip & sector) and Auto Program

-Resets internal state machine to read mode

-Automatically erase any combination of sectors or

the whole chip with Erase Suspend capability.

-Automatically programs and verifies data atspecified

address

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

-32-pin PDIP

• Erase Suspend/Erase Resume

-32-pin PLCC

-32-pinTSOP (Type 1)

• 20 years data retention

-Suspends an erase operation to read data from,

or program data to, a sector that is not being erased,

then resumes the erase operation.

GENERAL DESCRIPTION

The MX29F022T/B is a 2-mega bit Flash memory

organized as 256K bytes of 8 bits only. MXIC's Flash

memories offer the most cost-effective and reliable read/

write non-volatile random access memory.The

MX29F022T/B is packaged in 32-pin PDIP, PLCC and

32-pinTSOP(I). It is designed to be reprogrammed and

erased in-system or in-standard EPROM programmers.

MXIC's Flash technology reliably stores memory

contents even after 100,000 erase and program cycles.

The MXIC cell is designed to optimize the erase and

programming mechanisms. In addition, the combina-

tion of advanced tunnel oxide processing and low

internal electric fields for erase and programming

operations produces reliable cycling. The MX29F022T/

B uses a 5.0V ±10% VCC supply to perform the High

Reliability Erase and auto Program/Erase algorithms.

The standard MX29F022T/B offers access time as fast

as 55ns, allowing operation of high-speed microproc

essors without wait states. To eliminate bus contention,

the MX29F022T/B has separate chip enable (CE) and

output enable (OE) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up

protection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F022T/B uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining

maximum EPROM compatibility.

P/N:PM0556

REV. 1.1, JUN. 14, 2001

12 3 4 5 6 7...46

中文翻译

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与MX29F022NTTC-12相关器件

型号	品牌	获取价格	描述	数据表
MX29F022NTTC-55	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTTC-70	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022NTTC-90	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022T	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022T_98	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022TPC-12	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022TPC-55	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022TPC-70	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022TPC-90	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F022TQC-12	Macronix	获取价格	2M-BIT[256K x 8]CMOS FLASH MEMORY

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