Datasheet > MX29F004TPI-55

MX29F004TPI-55

更新时间： 2024-11-02 23:52:55

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
39页	572K
描述
EEPROM

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中文翻译

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数据手册

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MX29F004TPI-55 数据手册

MX29F004T/B

4M-BIT[512KX8]CMOSFLASHMEMORY

FEATURES

• 524,288 x 8 only

• Erase suspend/Erase Resume

- Suspends an erase operation to read data from, or

program data to, another sector that is not being

erased, then resumes the erase.

• Single power supply operation

- 5.0V only operation for read, erase and program op-

eration

• Fast access time: 70/90/120ns

• Low power consumption

• Status Reply

- Data polling & Toggle bit for detection of program

and erase cycle completion.

- 30mA maximum active current (5MHz)

- 1uA typical standby current

• Chip protect/unprotect for 5V only system or 5V/12V

system.

• Command register architecture

- Byte Programming (7us typical)

- Sector Erase

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V toVCC+1V

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

(Sector structure:16KB/8KB/8KB/32KB and 64KBx7)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- 32-pin PLCC, TSOP or PDIP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

- Automatically program and verify data at specified

address

• 20 years data retention

GENERAL DESCRIPTION

The MX29F004T/B is a 4-mega bit Flash memory orga-

nized as 512K bytes of 8 bits. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX29F004T/B is

packaged in 32-pin PLCC, TSOP, PDIP. It is designed

to be reprogrammed and erased in system or in stan-

dard EPROM programmers.

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and programming mechanisms. In addition,

the combination of advanced tunnel oxide

processing and low internal electric fields for erase

and program operations produces reliable cycling.

The MX29F004T/B uses a 5.0V±10% VCC supply

to perform the High Reliability Erase and auto

Program/Erase algorithms.

The standard MX29F004T/B offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29F004T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F004T/B uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to 100

milliamps on address and data pin from -1V to VCC

+ 1V.

P/N:PM0554

REV. 1.6, JUL. 18, 2002

12 3 4 5 6 7...39

中文翻译

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与MX29F004TPI-55相关器件

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MX29F004TPI-70	ETC	获取价格	EEPROM
MX29F004TPI-90	ETC	获取价格	EEPROM
MX29F004TQC-12	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TQC-12G	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TQC-55	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TQC-55G	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TQC-70	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TQC-70G	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TQC-90	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F004TQC-90G	Macronix	获取价格	4M-BIT [512KX8] CMOS FLASH MEMORY

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